Philips Semiconductors

BUK95/9609-55A

TrenchMOS™ logic level FET

Product data

Rev. 01 — 21 February 2002

3 of 14

9397 750 09229

© Koninklijke Philips Electronics N.V. 2002. All rights reserved.

Fig 1.

Normalized total power dissipation as a

function of mounting base temperature.

Fig 2.

Continuous drain current as a function of

mounting base temperature.

Fig 3.

Safe operating area; continuous and peak drain currents as a function of drain-source voltage.

03na19

0

40

80

120

0

50

100

150

200

Tmb (°C)

Pder

(%)

03nh27

0

40

80

120

0

50

100

150

200

Tmb (°C)

ID

(A)

capped at 75 A due to package

P

der

P

tot

P

tot 25 C

°

()

-----------------------

100%

×

=

03nh25

1

10

102

103

1

10

102

VDS (V)

ID

(A)

DC

100 ms

10 ms

1 ms

tp = 10 µs

100 µs

capped at 75 A due to package

Limit RDSon = VDS/ID