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BUK9610-55A Datasheet(PDF) 5 Page - NXP Semiconductors |
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BUK9610-55A Datasheet(HTML) 5 Page - NXP Semiconductors |
5 / 14 page Philips Semiconductors BUK9510-55A; BUK9610-55A TrenchMOS™ logic level FET Product data Rev. 01 — 20 August 2001 5 of 14 9397 750 08555 © Koninklijke Philips Electronics N.V. 2001. All rights reserved. 8. Characteristics Table 5: Characteristics Tj =25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 0.25 mA; VGS =0V Tj =25 °C55 - - V Tj = −55 °C50 - - V VGS(th) gate-source threshold voltage ID = 1 mA; VDS =VGS Figure 9 Tj =25 °C 1 1.5 2 V Tj = 175 °C 0.5 - - V Tj = −55 °C - - 2.3 V IDSS drain-source leakage current VDS = 55 V; VGS =0V Tj =25 °C - 0.05 10 µA Tj = 175 °C - - 500 µA IGSS gate-source leakage current VGS = ±10 V; VDS = 0 V - 2 100 nA RDSon drain-source on-state resistance VGS =5V; ID =25A Figure 7 and 8 Tj =25 °C- 8 10 m Ω Tj = 175 °C- - 20 m Ω VGS = 4.5 V; ID =25A - - 11 m Ω VGS =10V; ID =25A - 7 9 m Ω Dynamic characteristics Qg(tot) total gate charge VGS =5V; VDD =44V; ID =25A; Figure 14 -68 - nC Qgs gate-to-source charge - 8 - nC Qgd gate-to-drain (Miller) charge - 28 - nC Ciss input capacitance VGS =0V; VDS =25V; f = 1 MHz; Figure 12 - 3200 4307 pF Coss output capacitance - 740 888 pF Crss reverse transfer capacitance - 490 680 pF td(on) turn-on delay time VDD = 30 V; RL = 1.2 Ω; VGS =5V; RG =10 Ω -30 - ns tr rise time - 155 - ns td(off) turn-off delay time - 192 - ns tf fall time - 139 - ns Ld internal drain inductance from drain lead 6 mm from package to centre of die - 4.5 - nH from contact screw on mounting base to centre of die SOT78 - 3.5 - nH from upper edge of drain mounting base to centre of die SOT404 - 2.5 - nH Ls internal source inductance from source lead to source bond pad - 7.5 - nH |
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