TPCS8102

2002-05-17

1

TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS II)

TPCS8102

Lithium Ion Battery Applications

Portable Equipment Applications

Notebook PCs

Small footprint due to small and thin package

Characteristics

Symbol

Rating

Unit

Drain-source voltage

−20

V

−20

V

Gate-source voltage

±12

V

DC

(Note 1)

−6

Drain current

Pulse (Note 1)

−24

A

Drain power dissipation

(t = 10 s)

(Note 2a)

1.5

W

Drain power dissipation

(t = 10 s)

(Note 2b)

0.6

W

Single pulse avalanche energy

(Note 3)

46.8

mJ

Avalanche current

−6

A

Repetitive avalanche energy

(Note 2a, Note 4)

0.15

mJ

Channel temperature

150

°C

Storage temperature range

−55 to 150

°C

Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the

next page.

This transistor is an electrostatic sensitive device. Please handle with

caution.

Unit: mm

JEDEC

―

JEITA

―

TOSHIBA

2-3R1B

Weight: 0.035 g (typ.)

Circuit Configuration