K6R4016C1D

CMOS SRAM

PRELIMPreliminaryPPPPPPPPPINARY

Rev 2.0

- 7 -

June 2003

WRITE CYCLE*

* The above parameters are also guaranteed at industrial temperature range.

Parameter

Symbol

K6R4016C1D-10

Unit

Min

Max

Write Cycle Time

10

-

ns

Chip Select to End of Write

7

-

ns

Address Set-up Time

0

-

ns

Address Valid to End of Write

7

-

ns

Write Pulse Width(OE High)

7

-

ns

Write Pulse Width(OE Low)

10

-

ns

Write Recovery Time

0

-

ns

Write to Output High-Z

0

5

ns

Data to Write Time Overlap

5

-

ns

Data Hold from Write Time

0

-

ns

End of Write to Output Low-Z

3

-

ns

Address

Data Out

Previous Valid Data

Valid Data

TIMING DIAGRAMS

Valid Data

High-Z

CS

Address

UB, LB

OE

Data out