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K6R4016C1D-UC10 Datasheet(PDF) 9 Page - Samsung semiconductor

Part # K6R4016C1D-UC10
Description  256Kx16 Bit High Speed Static RAM(5.0V Operating). Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R4016C1D-UC10 Datasheet(HTML) 9 Page - Samsung semiconductor

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K6R4016C1D
CMOS SRAM
PRELIMPreliminaryPPPPPPPPPINARY
Rev 2.0
- 9 -
June 2003
NOTES(WRITE CYCLE)
1. All write cycle timing is referenced from the last valid address to the first transition address.
2. A write occurs during the overlap of a low CS,WE,LB and UB. A write begins at the latest transition CS going low and WE
going low ; A write ends at the earliest transition CS going high or WE going high. tWP is measured from the beginning of write
to the end of write.
3. t CW is measured from the later of CS going low to end of write.
4. t AS is measured from the address valid to the beginning of write.
5. t WR is measured from the end of write to the address change. t WR applied in case a write ends as CS or WE going high.
6. If OE , CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase
of the output must not . be applied because bus contention can occur.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state.
9. Dout is the read data of the new address.
10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be
applied.
Address
CS
Valid Data
UB, LB
WE
Data in
Data out
TIMING WAVEFORM OF WRITE CYCLE(4) (UB, LBControlled)
tWC
tCW(3)
tBW
tWP(2)
tDH
tDW
tWR(5)
tAW
tAS(4)
High-Z
High-Z(8)
tBLZ
tWHZ(6)
High-Z
TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled)
Address
CS
tAW
tDW
tDH
Valid Data
WE
Data in
Data out
High-Z
High-Z(8)
UB, LB
tCW(3)
tWP(2)
tAS(4)
tWC
tWR(5)
High-Z
High-Z
tLZ
tWHZ(6)
tBW


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