Electronic Components Datasheet Search |
|
K6R4016C1D-UI8 Datasheet(PDF) 7 Page - Samsung semiconductor |
|
K6R4016C1D-UI8 Datasheet(HTML) 7 Page - Samsung semiconductor |
7 / 12 page K6R4016C1D CMOS SRAM PRELIMPreliminaryPPPPPPPPPINARY Rev 2.0 - 7 - June 2003 WRITE CYCLE* * The above parameters are also guaranteed at industrial temperature range. Parameter Symbol K6R4016C1D-10 Unit Min Max Write Cycle Time tWC 10 - ns Chip Select to End of Write tCW 7 - ns Address Set-up Time tAS 0 - ns Address Valid to End of Write tAW 7 - ns Write Pulse Width(OE High) tWP 7 - ns Write Pulse Width(OE Low) tWP1 10 - ns Write Recovery Time tWR 0 - ns Write to Output High-Z tWHZ 0 5 ns Data to Write Time Overlap tDW 5 - ns Data Hold from Write Time tDH 0 - ns End of Write to Output Low-Z tOW 3 - ns Address Data Out Previous Valid Data Valid Data TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled , CS=OE=VIL, WE=VIH, UB, LB=VIL) tAA tRC tOH TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH) Valid Data High-Z tRC CS Address UB, LB OE Data out tHZ(3,4,5) tAA tCO tBA tOE tOLZ tLZ(4,5) tOH tOHZ tBHZ(3,4,5) tBLZ(4,5) |
Similar Part No. - K6R4016C1D-UI8 |
|
Similar Description - K6R4016C1D-UI8 |
|
|
Link URL |
Privacy Policy |
ALLDATASHEET.NET |
Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |