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PESD5V2S18U Datasheet(PDF) 4 Page - NXP Semiconductors |
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PESD5V2S18U Datasheet(HTML) 4 Page - NXP Semiconductors |
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4 / 8 page  2003 Apr 28 4 Philips Semiconductors Product specification ESD protection array PESD5V2S18U handbook, halfpage 103 102 10 MHC485 10−2 10−1 110 tp (ms) PZSM (W) Fig.2 Maximum non-repetitive peak reverse power as a function of pulse duration. handbook, halfpage 102 10 1 MHC486 10−2 10−1 110 tp (ms) IZSM (A) Fig.3 Maximum non-repetitive peak reverse current as a function of pulse duration. handbook, halfpage 40 01 Cd (pF) 35 VR (V) 26 50 60 70 80 90 100 110 4 MHC487 Fig.4 Diode capacitance as a function of reverse voltage; typical values. f = 1 MHz; Tamb =25 °C handbook, halfpage 3 5 6 789 10 4 11 10 8 7 9 MHC488 VCL (V) IPP(A) Fig.5 Clamping voltage as a function of peak reverse pulse current; typical values. tp = 8/20 µs |
Similar Part No. - PESD5V2S18U |
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Similar Description - PESD5V2S18U |
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