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TMS29F800B-90BDCDE Datasheet(PDF) 2 Page - Texas Instruments |
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TMS29F800B-90BDCDE Datasheet(HTML) 2 Page - Texas Instruments |
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2 / 51 page  TMS29F800T, TMS29F800B 1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES SMJS835B – MAY 1997 – REVISED OCTOBER 1997 2 POST OFFICE BOX 1443 • HOUSTON, TEXAS 77251–1443 44-PIN PSOP DBJ PACKAGE (TOP VIEW) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 RY/BY A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE VSS OE DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 RESET WE A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE VSS DQ15/A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC description The TMS29F800T/B is an 1 048 576 by 8-bit / 524 288 by 16-bit (8 388 608-bit), 5-V single-supply, programmable read-only memory device that can be electrically erased and reprogrammed. This device is organized as 1 048 576 by 8 bits or 524 288 by 16 bits, divided into 19 sectors: – One 16K-byte/8K-word boot sector – Two 8K-byte/4K-word sectors – One 32K-byte/16K-word sector – Fifteen 64K-byte/32K-word sectors Any combination of sectors can be marked as read-only or erased. Full-chip erasure is also supported. Sector data protection is afforded by methods that can disable any combination of sectors from write or read operations using standard programming equipment. An on-chip state machine provides an on-board algorithm that automatically pre-programs and erases any sector before it automatically programs and verifies program data at any specified address. The command set is compatible with that of the Joint Electronic Device Engineering Council (JEDEC) standards and is compatible with the JEDEC 8M-bit electrically erasable, programmable read-only memory (EEPROM) command set. A suspend/resume feature allows access to unaltered memory blocks during a section-erase operation. All outputs of this device are TTL-compatible. Additionally, an erase/suspend/resume feature supports reading data from, or programming data to, a sector that is not being erased. |
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