TMS29F800T-80CDBJE datasheet(3/51 Pages) TI

Part #	TMS29F800T-80CDBJE

Description	1048576 BY 8-BIT/ 524288 BY 16-BIT FLASH MEMORIES

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Manufacturer	TI [Texas Instruments]

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TMS29F800T, TMS29F800B

1048576 BY 8-BIT/ 524288 BY 16-BIT

FLASH MEMORIES

SMJS835B – MAY 1997 – REVISED OCTOBER 1997

3

POST OFFICE BOX 1443

• HOUSTON, TEXAS 77251–1443

48-PIN TSOP

DCD PACKAGE

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A15

A14

A13

A12

A11

A10

A9

A8

NC

WE

RESET

NC

RY / BY

A18

A17

A7

A6

A5

A4

A3

A2

A1

A16

BYTE

VSS

DQ15 / A–1

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VCC

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE

VSS

CE

A0

description (continued)

Device operations are selected by writing JEDEC-standard commands into the command register using

standard microprocessor write timings. The command register acts as an input to an internal-state machine

which interprets the commands, controls the erase and programming operations, outputs the status of the

device, outputs the data stored in the device, and outputs the device algorithm-selection code. On initial power

up, the device defaults to the read mode. A hardware-reset pin initializes the internal-state machine to the read

operation.

The device has low power dissipation with a 40-mA active read for the byte mode, 50-mA active read for the

word mode, 60-mA typical program/erase current mode, and less than 100-

mA standby current with a 5-mA

deep-power-down mode. These devices are offered with 80-, 90-, 100-, and 120-ns access times. Table 1 and

Table 2 show the sector-address ranges. The TMS29F800T/B is offered in a 44-pin plastic small-outline

package (PSOP) (DBJ suffix) and a 48-pin thin small-outline package (TSOP) (DCD suffix).

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TMS29F800T-80CDBJE Datasheet(PDF) 3 Page - Texas Instruments

TMS29F800T-80CDBJE Datasheet(HTML) 3 Page - Texas Instruments

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