1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

General Purpose Transistor

NPN Silicon

MAXIMUM RATINGS

Rating

Symbol

Value

Unit

Collector – Emitter Voltage

VCEO

15

Vdc

Collector – Base Voltage

VCBO

30

Vdc

Emitter – Base Voltage

VEBO

6.0

Vdc

Collector Current — Continuous

IC

200

mAdc

Total Device Dissipation @ TA = 25°C

Derate above 25

°C

PD

350

2.8

mW

mW/

°C

Total Device Dissipation @ TC = 25°C

Derate above 25

°C

PD

1.0

8.0

Watts

mW/

°C

Operating and Storage Junction

Temperature Range

TJ, Tstg

– 55 to +150

°C

THERMAL CHARACTERISTICS

Characteristic

Symbol

Max

Unit

Thermal Resistance, Junction to Ambient

RqJA

357

°C/W

Thermal Resistance, Junction to Case

RqJC

125

°C/W

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector – Emitter Breakdown Voltage

(IC = 1.0 mAdc, IB = 0)

V(BR)CEO

15

—

Vdc

Collector – Base Breakdown Voltage

(IC = 10 mAdc, IE = 0)

V(BR)CBO

30

—

Vdc

Emitter – Base Breakdown Voltage

(IE = 10 mAdc, IC = 0)

V(BR)EBO

6.0

—

Vdc

Base Cutoff Current

(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)

(VCE = 12 Vdc, VEB(off) = 0.25 Vdc, TA = 100°C)

IBEV

—

—

0.1

10

µAdc

Collector Cutoff Current

(VCE = 12 Vdc, VEB(off) = 0.25 Vdc)

ICEX

—

100

nAdc

Order this document

by 2N4264/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

2N4264

CASE 29–04, STYLE 1

TO–92 (TO–226AA)

1

2

3

COLLECTOR

3

2

BASE

1

EMITTER

REV 2