S1M8822 datasheet(11/22 Pages) SAMSUNG

Part #	S1M8822

Description	INTERGER RF/IF DUAL PLL

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Manufacturer	SAMSUNG [Samsung semiconductor]

Direct Link	http://www.samsung.com/Products/Semiconductor

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INTERGER RF/IF DUAL PLL

S1M8821/22/23

11

ELECTRICAL CHARACTERISTICS (Continued)

(VDD=3.0V, VP=3.0V, Ta =

=== 25°C, Unless otherwise specified)

Characteristic

Symbol

Test Conditions

Min.

Typ.

Max.

Unit

Charge Pump Outputs : CPoRF, CPoIF

Charge Pump Output

Current

ICP-SRC

VCP=VP/2, ICPo=Low

-1.0

mA

ICP-SINK

VCP=VP/2, ICPo=Low

+1.0

ICP-SRC

VCP=VP/2, ICPo=High

-4.0

ICP-SINK

VCP=VP/2, ICPo=High

+4.0

Charge Pump Leakage

Current

ICPL

0.5V

≤ V

CP ≤ VP-0.5V

-2.5

+2.5

nA

Output Current Sink vs.

Source Mismatch*

ICP-SINK

vs ICP-SRC

VCP=VP/2

3

10

%

Output Current Magnitude

Variation vs. Temperature**

ICP vs T

VCP=VP/2

10

%

Output Current Magnitude

Variation vs. Voltage***

ICP vs VCP

0.5V

≤ V

CP ≤ VP-0.5V

10

15

%

Programmable Divider

Operating

Frequency

S1M8823

finRF

VDD=2.7V to 4.0V

0.5

2.5

GHz

S1M8822

0.2

2.0

S1M8821

0.1

1.2

Operating Frequency

finIF

VDD=3.0V

45

520

MHz

RF Input Sensitivity

PfinRF

VDD=3.0V

-15

0

dBm

VDD=4.0V

-10

0

IF Input Sensitivity

PfinIF

VDD=2.7V to 4.0V

-10

0

dBm

Phase Detector Frequency

fPD

10

MHz

Reference Divider

Operating Frequency

OSCin

5

40

MHz

Input Sensitivity

VOSCin

0.5

VPP

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