Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

TM497FBK32S-70 Datasheet(PDF) 7 Page - Texas Instruments

Part # TM497FBK32S-70
Description  EXTENDED DATA OUT DYNAMIC RAM MODULES
Download  12 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

TM497FBK32S-70 Datasheet(HTML) 7 Page - Texas Instruments

Back Button TM497FBK32S-70 Datasheet HTML 3Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 4Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 5Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 6Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 7Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 8Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 9Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 10Page - Texas Instruments TM497FBK32S-70 Datasheet HTML 11Page - Texas Instruments Next Button
Zoom Inzoom in Zoom Outzoom out
 7 / 12 page
background image
TM497FBK32, TM497FBK32S 4 194 304 BY 32-BIT
TM893GBK32, TM893GBK32S 8 388 608 BY 32-BIT
EXTENDED DATA OUT DYNAMIC RAM MODULES
SMMS668 – NOVEMBER 1996
7
POST OFFICE BOX 1443
HOUSTON, TEXAS 77251–1443
absolute maximum ratings over operating free-air temperature range (unless otherwise noted)
Supply voltage range, VCC (see Note 1)
– 1 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Voltage range on any pin (see Note 1)
– 1 V to 7 V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Short-circuit output current
50 mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power dissipation
8 W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating free-air temperature range, TA
0
°C to 70°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage temperature range, Tstg
–55
°C to 125°C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and
functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not
implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.
NOTE 1: All voltage values are with respect to VSS.
recommended operating conditions
MIN
NOM
MAX
UNIT
VCC
Supply voltage
4.5
5
5.5
V
VIH
High-level input voltage
2.4
6.5
V
VIL
Low-level input voltage (see Note 2)
– 1
0.8
V
TA
Operating free-air temperature
0
70
°C
NOTE 2: The algebraic convention, where the more negative (less positive) limit is designated as minimum, is used for logic-voltage levels only.
electrical characteristics over recommended ranges of supply voltage and operating free-air
temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS‡
’497FBK32-60
’497FBK32-70
’497FBK32-80
UNIT
PARAMETER
TEST CONDITIONS‡
MIN
MAX
MIN
MAX
MIN
MAX
UNIT
VOH High-level output voltage
IOH = – 5 mA
2.4
2.4
2.4
V
VOL
Low-level output voltage
IOL = 4.2 mA
0.4
0.4
0.4
V
II
Input current (leakage)
VCC = 5.5 V,
VI = 0 V to 6.5 V,
All others = 0 V to VCC
± 10
± 10
± 10
µA
IO
Output current (leakage)
VCC = 5.5 V,
VO = 0 V to VCC,
CAS high
± 10
± 10
± 10
µA
ICC1
Read- or write-cycle current
(see Note 3)
VCC = 5.5 V,
Minimum cycle
880
800
720
mA
ICC2 Standby current
VIH = 2.4 V (TTL),
After one memory cycle,
RAS and CAS high
16
16
16
mA
ICC2 Standby current
VIH = VCC – 0.2 V (CMOS),
After one memory cycle,
RAS and CAS high
8
8
8
mA
ICC3
Average refresh current
(RAS only or CBR)
(see Note 3)
VCC = 5.5 V,
Minimum cycle,
RAS cycling,
CAS high
(RAS only);
RAS low after
CAS low (CBR)
880
800
720
mA
ICC4
Average page current
(see Note 4)
VCC = 5.5 V,
tPC = MIN,
RAS low,
CAS cycling
560
480
400
mA
‡ For test conditions shown as MIN / MAX, use the appropriate value specified under recommended operating conditions.
NOTES:
3. Measured with a maximum of one address change while RAS = VIL
4. Measured with a maximum of one address change while CAS = VIH


Similar Part No. - TM497FBK32S-70

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
TM497FBK32G TI1-TM497FBK32G Datasheet
174Kb / 12P
[Old version datasheet]   EXTENDED DATA OUT DYNAMIC RAM MODULES
TM497FBK32H TI1-TM497FBK32H Datasheet
209Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM497FBK32H-60 TI1-TM497FBK32H-60 Datasheet
209Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM497FBK32I TI1-TM497FBK32I Datasheet
209Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM497FBK32I-60 TI1-TM497FBK32I-60 Datasheet
209Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
More results

Similar Description - TM497FBK32S-70

ManufacturerPart #DatasheetDescription
logo
Texas Instruments
TM4EN64KPU TI1-TM4EN64KPU Datasheet
328Kb / 20P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM497FBK32G TI1-TM497FBK32G Datasheet
174Kb / 12P
[Old version datasheet]   EXTENDED DATA OUT DYNAMIC RAM MODULES
TM2EP64DJN TI1-TM2EP64DJN Datasheet
679Kb / 43P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM4EP64BJN TI-TM4EP64BJN Datasheet
354Kb / 22P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM497FBK32H TI1-TM497FBK32H Datasheet
209Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES
TM2EJ64DPN TI1-TM2EJ64DPN Datasheet
312Kb / 20P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES ??SODIMM
TM4EP72BJB TI1-TM4EP72BJB Datasheet
248Kb / 13P
[Old version datasheet]   EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES
TM4EJ64KPU TI1-TM4EJ64KPU Datasheet
378Kb / 24P
[Old version datasheet]   EXTENDED-DATA-OUT DYNAMIC RAM MODULES ??? SODIMM
logo
Samsung semiconductor
K4E660412E SAMSUNG-K4E660412E Datasheet
192Kb / 21P
   16M x 4bit CMOS Dynamic RAM with Extended Data Out
K4E661612C SAMSUNG-K4E661612C Datasheet
884Kb / 36P
   4M x 16bit CMOS Dynamic RAM with Extended Data Out
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com