KM736V689L datasheet(7/15 Pages) SAMSUNG

Part #	KM736V689L

Description	64Kx36 Synchronous SRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

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PRELIMINARY

KM736V689/L

64Kx36 Synchronous SRAM

- 7 -

Rev 1.0

April 1997

TEST CONDITIONS

Parameter

Value

Input Pulse Level

0 to 3V

Input Rise and Fall Time(Measured at 0.3V and 2.7V)

2ns

Input and Output Timing Reference Levels

1.5V

Output Load

See Fig. 1

Output Load(B),(3.3V I/O)

(for tLZC, tLZOE, tHZOE& tHZC)

Dout

353

Ω

5pF*

+3.3V

319

Ω

Fig. 1

* Including Scope and Jig Capacitance

(TA=0 to 70

°C, VDD=3.3V-5%/+10%, unless otherwise specified)

Output Load(A)

Dout

Z0=50

Ω

VL=1.5V

* Capacitive Load consists of all components of

30pF*

the test environment.

RL=50

Ω

DC ELECTRICAL CHARACTERISTICS(TA=0 to 70

°C, VDD=3.3V±5%)

* VIL(Min)=-3.0(Pulse Width

≤20ns)

** In Case of I/O Pins, the Max. VIH=VDDQ+0.5V

Parameter

Symbol

Test Conditions

Min

Max

Unit

Input Leakage Current(except ZZ)

IIL

VDD=VSS to VDD ; VIN=VSS to VDD

-2

+2

µA

Output Leakage Current

IOL

Output Disabled, VOUT=VSS to VDDQ

-2

+2

µA

Operating Current

ICC

Device Selected, IOUT=0mA, ZZ

≤VIL,

All Inputs=VIL or VIH

Cycle Time

≥tCYC min

-7

-

395

mA

-8

-

360

-10

-

320

-11

-

320

Standby Current

ISB

Device deselected, IOUT = 0mA,

ZZ

≤VIL, f = Max,

All Inputs

≤0.2V or≥VDD-0.2V

-7

-

100

mA

-8

-

90

-10

-

80

-11

-

80

ISB1

Device deselected, IOUT = 0mA,

ZZ

≤0.2V, f = 0,

All Inputs=fixed (VDD-0.2V or 0.2V)

-

10

mA

L-Ver

-

5.0

mA

ISB2

Device deselected, IOUT=0mA,

ZZ

≥VDD-0.2V, f = Max,

All Inputs

≤VIL or≥VIH

-

10

mA

L-Ver

-

1.0

mA

Output Low Voltage

VOL

IOL = 8.0mA

-

0.4

V

Output High Voltage

VOH

IOH = -4.0mA

2.4

-

V

Input Low Voltage

VIL

-0.5*

0.8

V

Input High Voltage

VIH

2.0

5.5**

V

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