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Q67040S4724 Datasheet(PDF) 6 Page - Infineon Technologies AG |
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Q67040S4724 Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 12 page IGP30N60T TrenchStop Series IGW30N60T Power Semiconductors 6 Rev. 2.2 Dec-04 0A 10A 20A 30A 1ns 10ns 100ns t r t d(on) t f t d(off) 10Ω 20Ω 30Ω 40Ω 10ns 100ns t r t d(on) t f t d(off) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 10Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ = 175°C, VCE= 400V, VGE = 0/15V, IC = 30A, Dynamic test circuit in Figure E) 25°C 50°C 75°C 100°C 125°C 150°C 10ns 100ns t r t d(on) t f t d(off) -50°C 0°C 50°C 100°C 150°C 0V 1V 2V 3V 4V 5V 6V 7V min. typ. max. TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 30A, RG=10Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.43mA) |
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