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WSB1151
JAN. 2003 REV:00
copyright@wooseok s.tech corp. All rights reserved.
HIGH CURRENT AMPLIFIER
◇
Low Collector Saturation Voltage
◇
Complement to WSD1691
ABSOLUTE MAXIMUM RATINGS
(Ta=25℃)
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
Characteristic
Symbol
Test Condition
Min
TYP
MA
X
Unit
Collector Cut-off Current
ICBO
VCB=-50V ,IE=0
-10
㎂
Emitter Cut-off Current
IEBO
VEB=-7V ,IC=0
-10
㎂
*DC Current Gain
hFE1
#hFE2
hFE3
VCE=-1V ,IC=-100mA
VCE=-1V ,IC=-2.0A
VCE=-2V, IC=-5.0A
60
100
50
200
400
*Collector-Emitter Saturation Voltage
VCE(sat)
IC=-2A, IB=-200mA
-0.14 -0.3
V
*Base-Emitter Saturation Voltage
VBE(sat)
IC=-2A, IB=-200mA
-0.9
-1.2
V
Turn on Time
tON
IC=-2.0A, RL=5Ω
0.15
1
㎲
Storage Time
tSTG
IB1=-IB2=200mA,
0.78
2.5
㎲
Fall Time
tF
VCC=-10V
0.18
1
㎲
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-60
V
Collector-Emitter Voltage
VCEO
-60
V
Emitter-Base voltage
VEBO
-7
V
Collector Current(DC)
IC
-5.0
A
Collector Current(Pulse)
IC
-8.0
A
Collector Power Dissipation(Tc=25℃)
PC
20
W
Collector Power Dissipation(Ta=25℃)
PC
1.3
W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~
+150
℃
1. Emitter
2. Collector
3. Base
1
3
2
PNP EPITAXIAL SILICON TRANSISTOR
* Pulse Test :PW=350㎲ ,Duty Cycle=2% Pulsed
# hFE(2) Classification:
Classification
O
Y
G
hFE
100~200
160~320
200~400
2