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EL7536IY-T7 Datasheet(PDF) 2 Page - Intersil Corporation

Part # EL7536IY-T7
Description  Monolithic 1A Step-Down Regulator
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

EL7536IY-T7 Datasheet(HTML) 2 Page - Intersil Corporation

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FN7396.5
August 10, 2005
IMPORTANT NOTE: All parameters having Min/Max specifications are guaranteed. Typ values are for information purposes only. Unless otherwise noted, all tests are
at the specified temperature and are pulsed tests, therefore: TJ = TC = TA
Absolute Maximum Ratings (T
A = 25°C)
VIN, VDD, POR to SGND . . . . . . . . . . . . . . . . . . . . . . -0.3V to +6.5V
LX to PGND . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)
RSI, EN, VO, FB to SGND . . . . . . . . . . . . . . . -0.3V to (VIN + +0.3V)
PGND to SGND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.3V to +0.3V
Peak Output Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2A
Operating Ambient Temperature . . . . . . . . . . . . . . . .-40°C to +85°C
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . .-65°C to +150°C
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +145°C
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Electrical Specifications
VDD = VIN = VEN = 3.3V, C1 = C2 = 10µF, L = 1.8µH, VO = 1.8V, unless otherwise specified.
PARAMETER
DESCRIPTION
CONDITIONS
MIN
TYP
MAX
UNIT
DC CHARACTERISTICS
VFB
Feedback Input Voltage
790
800
810
mV
IFB
Feedback Input Current
250
nA
VIN, VDD
Input Voltage
2.5
5.5
V
VIN,OFF
Minimum Voltage for Shutdown
VIN falling
2
2.2
V
VIN,ON
Maximum Voltage for Startup
VIN rising
2.2
2.4
V
IDD
Supply Current
PWM, VIN = VDD = 5V
400
500
µA
EN = 0, VIN = VDD = 5V
0.1
1
µA
RDS(ON)-PMOS PMOS FET Resistance
VDD = 5V, wafer test only
70
100
m
RDS(ON)-NMOS NMOS FET Resistance
VDD = 5V, wafer test only
45
75
m
ILMAX
Current Limit
1.5
A
TOT,OFF
Over-temperature Threshold
T rising
145
°C
TOT,ON
Over-temperature Hysteresis
T falling
130
°C
IEN, IRSI
EN, RSI Current
VEN, VRSI = 0V and 3.3V
-1
1
V
VEN1, VRSI1
EN, RSI Rising Threshold
VDD = 3.3V
2.4
V
VEN2, VRSI2
EN, RSI Falling Threshold
VDD = 3.3V
0.8
V
VPOR
Minimum VFB for POR, WRT Targeted
VFB Value
VFB rising
95
%
VFB falling
86
%
VOLPOR
POR Voltage Drop
ISINK = 5mA
35
70
mV
AC CHARACTERISTICS
FPWM
PWM Switching Frequency
1.4
1.5
1.75
MHz
tRSI
Minimum RSI Pulse Width
Guaranteed by design
25
50
ns
tSS
Soft-start Time
650
µs
tPOR
Power On Reset Delay Time
80
100
120
ms
EL7536


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