BD810 datasheet(3/8 Pages) ONSEMI

Part #	BD810

Description	POWER TRANSISTORS PNP SILICON

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Manufacturer	ONSEMI [ON Semiconductor]

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BD809 BD810

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3

500

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.5

0.2

10

1.0

2.0

100

50

TJ = 150°C

25°C

-55°C

200

20

NPN

BD809

PNP

BD810

IC, COLLECTOR CURRENT (AMP)

TJ = 150°C

25°C

-55°C

5.0

VCE = 2.0 V

10

5.0

0.5

0.2

10

1.0

2.0

20

5.0

500

100

50

200

20

5.0

10

5.0

100

IC = 1.0 A

TJ = 25°C

10

4.0 A

8.0 A

20

50

2000

1000

200 500

Figure 4. Collector Saturation Region

2.0

IB, BASE CURRENT (mA)

5.0

100

5000

1.8

1.6

1.4

1.2

IC = 1.0 A

TJ = 25°C

0

10

4.0 A

8.0 A

20

50

1.0

0.2

0.6

0.8

0.4

2000

1000

200 500

5000

2.0

1.8

1.6

1.4

1.2

0

1.0

0.2

0.6

0.8

0.4

IB, BASE CURRENT (mA)

VCE(sat) @ IC/IB = 10

TJ = 25°C

VBE @ VCE = 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2

0.5

2.0

20

10

1.0

5.0

VBE(sat) @ IC/IB = 10

2.0

IC, COLLECTOR CURRENT (AMP)

Figure 5. “On” Voltages

IC, COLLECTOR CURRENT (AMP)

VCE(sat) @ IC/IB = 10

TJ = 25°C

VBE @ VCE = 2.0 V

2.8

1.6

1.2

2.4

0

0.8

0.4

0.2

0.5

2.0

20

10

1.0

5.0

VBE(sat) = IC/IB = 10

2.0

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