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PIC18F2525 Datasheet(PDF) 88 Page - Microchip Technology

Part # PIC18F2525
Description  28/40/44-Pin Enhanced Flash Microcontrollers with 10-Bit A/D and nanoWatt Technology
Download  390 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

PIC18F2525 Datasheet(HTML) 88 Page - Microchip Technology

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PIC18F2525/2620/4525/4620
DS39626B-page 86
Preliminary
 2004 Microchip Technology Inc.
7.6
Operation During Code-Protect
Data EEPROM memory has its own code-protect bits in
configuration words. External read and write operations
are disabled if code protection is enabled.
The microcontroller itself can both read and write to the
internal data EEPROM, regardless of the state of the
code-protect configuration bit. Refer to Section 23.0
“Special Features of the CPU” for additional
information.
7.7
Protection Against Spurious Write
There are conditions when the device may not want to
write to the data EEPROM memory. To protect against
spurious EEPROM writes, various mechanisms have
been implemented. On power-up, the WREN bit is
cleared. In addition, writes to the EEPROM are blocked
during
the
Power-up
Timer
period
(TPWRT,
parameter 33).
The write initiate sequence and the WREN bit together
help prevent an accidental write during Brown-out
Reset, power glitch or software malfunction.
7.8
Using the Data EEPROM
The data EEPROM is a high endurance, byte address-
able array that has been optimized for the storage of
frequently
changing
information
(e.g.,
program
variables or other data that are updated often).
Frequently changing values will typically be updated
more often than specification D124. If this is not the
case, an array refresh must be performed. For this
reason, variables that change infrequently (such as
constants, IDs, calibration, etc.) should be stored in
Flash program memory.
A simple data EEPROM refresh routine is shown in
Example 7-3.
EXAMPLE 7-3:
DATA EEPROM REFRESH ROUTINE
Note:
If data EEPROM is only used to store
constants and/or data that changes often,
an array refresh is likely not required. See
specification D124.
CLRF
EEADR
; Start at address 0
CLRF
EEADRH
;
BCF
EECON1, CFGS
; Set for memory
BCF
EECON1, EEPGD
; Set for Data EEPROM
BCF
INTCON, GIE
; Disable interrupts
BSF
EECON1, WREN
; Enable writes
Loop
; Loop to refresh array
BSF
EECON1, RD
; Read current address
MOVLW
55h
;
MOVWF
EECON2
; Write 55h
MOVLW
0AAh
;
MOVWF
EECON2
; Write 0AAh
BSF
EECON1, WR
; Set WR bit to begin write
BTFSC
EECON1, WR
; Wait for write to complete
BRA
$-2
INCFSZ
EEADR, F
; Increment address
BRA
LOOP
; Not zero, do it again
INCFSZ
EEADRH, F
; Increment the high address
BRA
LOOP
; Not zero, do it again
BCF
EECON1, WREN
; Disable writes
BSF
INTCON, GIE
; Enable interrupts


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