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K6R1004V1D-JC08 Datasheet(PDF) 6 Page - Samsung semiconductor

Part # K6R1004V1D-JC08
Description  256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1004V1D-JC08 Datasheet(HTML) 6 Page - Samsung semiconductor

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PRELIMINARY
Rev. 3.0
- 6 -
July 2004
PRELIMINARY
K6R1004C1D
CMOS SRAM
Address
Data Out
Previous Valid Data
Valid Data
TIMING DIAGRAMS
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE=VIL, WE=VIH)
tAA
tRC
tOH
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)
WRITE CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1004C1D-10
Unit
Min
Max
Write Cycle Time
tWC
10
-
ns
Chip Select to End of Write
tCW
7-
ns
Address Set-up Time
tAS
0-
ns
Address Valid to End of Write
tAW
7-
ns
Write Pulse Width(OE High)
tWP
7-
ns
Write Pulse Width(OE Low)
tWP1
10
-
ns
Write Recovery Time
tWR
0-
ns
Write to Output High-Z
tWHZ
05
ns
Data to Write Time Overlap
tDW
5-
ns
Data Hold from Write Time
tDH
0-
ns
End of Write to Output Low-Z
tOW
3-
ns
Valid Data
High-Z
tRC
CS
Address
OE
Data out
tHZ(3,4,5)
tAA
tCO
tOE
tOLZ
tLZ(4,5)
tOHZ
tPU
tPD
50%
50%
VCC
Current
ICC
ISB
tDH


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