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K6R1008V1D-KC08 Datasheet(PDF) 7 Page - Samsung semiconductor

Part # K6R1008V1D-KC08
Description  256Kx4 Bit (with OE) High-Speed CMOS Static RAM(5.0V Operating).
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1008V1D-KC08 Datasheet(HTML) 7 Page - Samsung semiconductor

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PRELIMINARY
Rev. 3.0
- 7 -
July 2004
PRELIMINARY
K6R1004C1D
CMOS SRAM
NOTES(READ CYCLE)
1. WE is high for read cycle.
2. All read cycle timing is referenced from the last valid address to the first transition address.
3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or
VOL levels.
4. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to
device.
5. Transition is measured
±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested.
6. Device is continuously selected with CS=VIL.
7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle.
TIMING WAVEFORM OF WRITE CYCLE(1) (OE= Clock)
Address
CS
tWP(2)
tDW
tDH
Valid Data
WE
Data in
Data out
tWC
tWR(5)
tAW
tCW(3)
High-Z(8)
High-Z
OE
tOHZ(6)
tAS(4)
TIMING WAVEFORM OF WRITE CYCLE(2) (OE=Low Fixed)
Address
CS
tWP1(2)
tDW
tDH
tOW
tWHZ(6)
Valid Data
WE
Data in
Data out
tWC
tAS(4)
tWR(5)
tAW
tCW(3)
(10)
(9)
High-Z(8)
High-Z


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