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P8SMB26A Datasheet(HTML) 1 Page - Shanghai Yint Electronic Co., Ltd

Part No. P8SMB26A
Description  P8SMB Transient Voltage Suppressor Diode Series
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Maker  YINT [Shanghai Yint Electronic Co., Ltd]
Homepage  https://www.yint.com.cn/
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P8SMB26A Datasheet(HTML) 1 Page - Shanghai Yint Electronic Co., Ltd

   
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Transient Voltage Suppression Diodes
Trustworthy electronic circuit protection expert
P8SMB Series
www.yint.com.cn
Rev:19.3
1
P8SMB Transient Voltage Suppressor Diode Series
General Information
The P8SMB series is designed to protect voltage sensitive components from
high voltage, high energy transients. They have excellent clamping capability, high
surge capability, low zener impedance and fast response time. The P8SMB series is
supplied in YINT Semiconductor’s exclusive ,cost-effective, highly reliable and is
ideally suited for use in communication systems, automotive, numerical controls ,
process controls, medical equipment, business machines, power supplies and many
other industrial/consumer Applications.
Features
Case: DO-214AA/SMB
For surface mounted applications in order to optimize board space.
Polarity: Color band denoted positive end (cathode) except Bidirectional.
Typical failure mode is short from over-specified voltage or current
High Temperature soldering:260°C/10 seconds at terminals.
Terminal: Solder plated, solderable per MIL-STD-750,Method 2026.
Applications
TVS devices are ideal for the
protection of I/O Interfaces, VCC bus
and other vulnerable circuits used in
Telecom, Computer, Industrial and
Consumer electronic applications.
Electrical Characteristics (@ TA = 25°C Unless Otherwise Noted)
Parameter
Symbol
Value
Unit
Minimum Peak Pulse Power Dissipation (T = 1 ms) (note1 note 2)
PPK
800
Watts
Peak Forward Surge Current
8.3 ms Single Half Sine Wave Superimposed on Rated Load
(JEDEC Method) (Note 3)
IFSM
100
Amps
Steady State Power Dissipation @ TL = 75 °C
PM(AV)
5.0
Watts
Maximum Instantaneous Forward Voltage @ I PP = 50 A
(For Unidirectional Units Only)(note4 note 5)
VF
3.5/5
Volts
Operating Temperature Range
TJ
-55 to +150
°C
Storage Temperature Range
TSTG
-55 to +175
°C
NOTES:
1. Non-repetitive current pulse, per Pulse Waveform graph and derated above TA = 25 °C per Pulse Derating Curve.
2. Thermal Resistance Junction to Lead.
3. 8.3 ms Single Half-Sine Wave duty cycle = 4 pulses maximum per minute (unidirectional units only).
4. Single Phase, Half Wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20 %.
5. VF<3.5V for VBR< 200V and VF <5.0V for VBR> 201V.
Molded plastic
glass passivated junction.


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