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Q67040-S4626 Datasheet(PDF) 4 Page - Infineon Technologies AG

Part # Q67040-S4626
Description  LightMOS Power Transistor
Download  15 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67040-S4626 Datasheet(HTML) 4 Page - Infineon Technologies AG

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ILA03N60, ILP03N60
^
ILB03N60, ILD03N60
Power Semiconductors
4
Rev. 1.2 Apr-04
Switching Characteristic, Inductive Load, at Tj=150
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
IGBT Characteristic
Turn-on delay time
td(on)
-
20
-
Rise time
tr
-
45
-
Turn-off delay time
td(off)
-
120
-
Fall time
tf
-
120
-
ns
Turn-on energy
Eon
3
-
15
-
Turn-off energy
Eoff
VCC=400V,
IC=0.8A,
VGE=0/10V,
RG=60
Ω,
CSnubber=0nF
(CSnubber: Snubber
capacitor)
-
28
-
Turn-off energy
Eoff
CSnubber =1nF
-
12
-
µJ
Switching Characteristic, Inductive Load, at Tj=25
°C
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Reverse diode Characteristic (switching in half bridge configuration with same transistor according
to figure C)
Reverse recovery time
trr
-
90
-
ns
Reverse recovery charge
Qrr
-
0.27
-
µC
Peak reverse recovery current
Irrm
-
5.5
-
A
Peak rate of fall of reverse recovery
current
dirr/dt
VR=400V,
IF=0.8A,
VGE=0/10V,
RG=80
-
300
-
A/µs
Reverse recovery time
trr
-
250
-
ns
Reverse recovery charge
Qrr
-
0.75
-
µC
Peak reverse recovery current
Irrm
-
8
-
A
Peak rate of fall of reverse recovery
current
dirr/dt
VR=400V,
IF=3A,
VGE=0/10V,
RG=80
-
300
-
A/µs


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