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C106D Datasheet(PDF) 3 Page - ON Semiconductor

Part # C106D
Description  Sensitive Gate Silicon Controlled Rectifiers
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

C106D Datasheet(HTML) 3 Page - ON Semiconductor

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C106 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(VAK = Rated VDRM or VRRM, RGK = 1000 Ohms)
TJ = 25°C
TJ = 110°C
IDRM, IRRM
10
100
mA
mA
ON CHARACTERISTICS
Peak Forward On−State Voltage (Note 3)
(ITM = 4 A)
VTM
2.2
V
Gate Trigger Current (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
TJ = 25°C
TJ = −40°C
IGT
15
35
200
500
mA
Peak Reverse Gate Voltage (IGR = 10 mA)
VGRM
6.0
V
Gate Trigger Voltage (Continuous dc) (Note 4)
(VAK = 6 Vdc, RL = 100 Ohms)
TJ = 25°C
TJ = −40°C
VGT
0.4
0.5
0.60
0.75
0.8
1.0
V
Gate Non−Trigger Voltage (Continuous dc) (Note 4)
(VAK = 12 V, RL = 100 Ohms, TJ = 110°C)
VGD
0.2
V
Latching Current
(VAK = 12 V, IG = 20 mA)
TJ = 25°C
TJ = −40°C
IL
0.20
0.35
5.0
7.0
mA
Holding Current (VD = 12 Vdc)
(Initiating Current = 20 mA, Gate Open)
TJ = 25°C
TJ = −40°C
TJ = +110°C
IH
0.19
0.33
0.07
3.0
6.0
2.0
mA
DYNAMIC CHARACTERISTICS
Critical Rate−of−Rise of Off−State Voltage
(VAK = Rated VDRM, Exponential Waveform, RGK = 1000 Ohms,
TJ = 110°C)
dv/dt
8.0
V/
ms
3. Pulse Test: Pulse Width
≤ 2.0 ms, Duty Cycle ≤ 2%.
4. RGK is not included in measurement.
+ Current
+ Voltage
VTM
IDRM at VDRM
IH
Symbol
Parameter
VDRM
Peak Repetitive Off State Forward Voltage
IDRM
Peak Forward Blocking Current
VRRM
Peak Repetitive Off State Reverse Voltage
IRRM
Peak Reverse Blocking Current
VTM
Peak On State Voltage
IH
Holding Current
Voltage Current Characteristic of SCR
Anode +
on state
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
Forward Blocking Region
IRRM at VRRM
(off state)


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