BH616UV8010DI datasheet(3/11 Pages) BSI

Part #	BH616UV8010DI

Description	Ultra Low Power/High Speed CMOS SRAM 512K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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BSI

BH616UV8010

R0201-BH616UV8010

Revision

1.0

Jul.

2005

3

n ABSOLUTE MAXIMUM RATINGS

(1)

SYMBOL

PARAMETER

RATING

UNITS

VTERM

Terminal Voltage with

Respect to GND

-0.5

(2) to 4.6V

V

TBIAS

Temperature Under

Bias

-40 to +125

OC

TSTG

Storage Temperature

-60 to +150

OC

PT

Power Dissipation

1.0

W

IOUT

DC Output Current

20

mA

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

2.

–2.0V in case of AC pulse width less than 30 ns

n OPERATING RANGE

RANG

AMBIENT

TEMPERATURE

VCC

Commercial

0

OC to + 70OC

1.65V ~ 3.6V

Industrial

-25

OC to + 85OC

1.65V ~ 3.6V

n CAPACITANCE

(1) (T

A = 25

OC, f = 1.0MHz)

SYMBOL PAMAMETER

CONDITIONS

MAX.

UNITS

CIN

Input

Capacitance

VIN = 0V

6

pF

CIO

Input/Output

Capacitance

VI/O = 0V

8

pF

1. This parameter is guaranteed and not 100% tested.

n DC ELECTRICAL CHARACTERISTICS (T

A = -25

OC to +85OC)

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN.

TYP.

(1)

MAX.

UNITS

VCC

Power Supply

1.65

--

3.6

V

VCC=1.8V

0.4

VIL

Input Low Voltage

VCC=3.6V

-0.3

(2)

--

0.8

V

VCC=1.8V

1.4

VIH

Input High Voltage

VCC=3.6V

2.0

--

VCC+0.3

(3)

V

IIL

Input Leakage Current

VIN = 0V to VCC,

CE1 = VIH or CE2 = VIL

--

1

uA

ILO

Output Leakage Current

VI/O = 0V to VCC

,

CE1 = VIH or CE2 = VIL or OE = VIH or

UB = LB = VIH

--

1

uA

VCC = Max, IOL = 0.2mA

VCC=1.8V

0.2

VOL

Output Low Voltage

VCC = Max, IOL = 2.0mA

VCC=3.6V

--

0.4

V

VCC = Min, IOH = -0.1mA

VCC=1.8V

VCC-0.2

VOH

Output High Voltage

VCC = Min, IOH = -1.0mA

VCC=3.6V

2.4

--

V

VCC=1.8V

4.5

7

ICC

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH,

IDQ = 0mA, f = FMAX

(4)

VCC=3.6V

--

5.0

10

mA

VCC=1.8V

1.0

1.5

ICC1

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH,

IDQ = 0mA, f = 1MHz

VCC=3.6V

--

1.5

2.0

mA

VCC=1.8V

0.5

ICCSB

Standby Current

– TTL

CE1 = VIH, or CE2 = VIL,

IDQ = 0mA

VCC=3.6V

--

1.0

mA

VCC=1.8V

2.5

12

ICCSB1

(5)

Standby Current

– CMOS

CE1≧VCC-0.2V or CE2≦0.2V,

VIN≧VCC-0.2V or VIN≦0.2V

VCC=3.6V

--

2.5

15

uA

1. Typical characteristics are at TA=25

OC.

2. Undershoot: -1.0V in case of pulse width less than 20 ns.

3. Overshoot: VCC+1.0V in case of pulse width less than 20 ns.

4. FMAX=1/tRC.

5. ICCSB1(MAX.) is 10uA/13uA at VCC=1.8V/3.6V and TA=0

OC ~ 70OC.

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