Copyright © Alliance Semiconductor. All rights reserved.
®
AS4C1M16F5
4/11/01; v.0.9.1
Alliance Semiconductor
P. 1 of 21
5V 1M×16 CMOS DRAM (fast-page mode)
Features
• Organization: 1,048,576 words × 16 bits
• High speed
- 50/60 ns RAS access time
- 20/25 ns fast page cycle time
- 13/17 ns CAS access time
• Low power consumption
- Active:
880 mW max (AS4C1M16E0-60)
- Standby:
11 mW max, CMOS DQ
• Fast page mode
• 1024 refresh cycles, 16 ms refresh interval
- RAS-only or CAS-before-RAS refresh
• Read-modify-write
• TTL-compatible, three-state DQ
• JEDEC standard package and pinout
- 400 mil, 42-pin SOJ
- 400 mil, 44/50-pin TSOP II
• 5V power supply
• Industrial and commercial temperature available
Pin arrangement
42
41
40
39
38
37
36
35
34
33
VSS
DQ16
DQ15
DQ14
DQ13
VSS
DQ12
DQ11
DQ10
DQ9
SOJ
32
31
30
29
28
27
26
25
24
23
NC
LCAS
UCAS
OE
A9
A8
A6
A5
A4
VSS
1
2
3
4
5
6
7
8
9
10
Vcc
DQ1
DQ2
DQ3
DQ4
Vcc
DQ5
DQ6
DQ7
DQ8
11
12
13
14
15
16
17
18
19
20
NC
NC
WE
RAS
NC
NC
A0
A1
A2
A3
22
21
Vcc
A7
VCC
DQ1
DQ2
DQ3
DQ4
VCC
DQ5
DQ6
DQ7
DQ8
NC
NC
VSS
DQ16
DQ15
DQ14
DQ13
VSS
DQ12
DQ11
DQ10
DQ9
NC
NC
LCAS
UCAS
OE
50
49
48
47
46
45
44
43
42
41
40
36
35
34
33
32
31
30
29
1
2
3
4
5
6
7
8
9
10
11
15
16
17
18
19
20
21
22
TSOP II
23
24
25
28
27
26
NC
WE
RAS
NC
NC
A0
A1
A2
A3
VCC
A9
A8
A7
A6
A5
A4
VSS
Pin designation
Pin(s)
Description
A0 to A9
Address inputs
RAS
Row address strobe
DQ1 to DQ16
Input/output
OE
Output enable
WE
Write enable
UCAS
Column address strobe, upper byte
LCAS
Column address strobe, lower byte
VCC
Power
VSS
Ground
Selection guide
Symbol
AS4C1M16F5-50
AS4C1M16F5-60
Unit
Maximum RAS access time
tRAC
50
60
ns
Maximum column address access time
tAA
25
30
ns
Maximum CAS access time
tCAC
13
17
ns
Maximum output enable (OE) access time
tOEA
13
15
ns
Minimum read or write cycle time
tRC
84
104
ns
Minimum fast page mode cycle time
tPC
20
25
ns
Maximum operating current
ICC1
170
160
mA
Maximum CMOS standby current
ICC5
2.0
2.0
mA