AS4C1M16F5-60JC datasheet(1/21 Pages) ETC1

Part #	AS4C1M16F5-60JC

Description	5V 1M X 16 CMOS DRAM

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®

AS4C1M16F5

4/11/01; v.0.9.1

Alliance Semiconductor

P. 1 of 21

5V 1M×16 CMOS DRAM (fast-page mode)

Features

• Organization: 1,048,576 words × 16 bits

• High speed

- 50/60 ns RAS access time

- 20/25 ns fast page cycle time

- 13/17 ns CAS access time

• Low power consumption

- Active:

880 mW max (AS4C1M16E0-60)

- Standby:

11 mW max, CMOS DQ

• Fast page mode

• 1024 refresh cycles, 16 ms refresh interval

- RAS-only or CAS-before-RAS refresh

• Read-modify-write

• TTL-compatible, three-state DQ

• JEDEC standard package and pinout

- 400 mil, 42-pin SOJ

- 400 mil, 44/50-pin TSOP II

• 5V power supply

• Industrial and commercial temperature available

Pin arrangement

42

41

40

39

38

37

36

35

34

33

VSS

DQ16

DQ15

DQ14

DQ13

VSS

DQ12

DQ11

DQ10

DQ9

SOJ

32

31

30

29

28

27

26

25

24

23

NC

LCAS

UCAS

OE

A9

A8

A6

A5

A4

VSS

1

2

3

4

5

6

7

8

9

10

Vcc

DQ1

DQ2

DQ3

DQ4

Vcc

DQ5

DQ6

DQ7

DQ8

11

12

13

14

15

16

17

18

19

20

NC

WE

RAS

NC

A0

A1

A2

A3

22

21

Vcc

A7

VCC

DQ1

DQ2

DQ3

DQ4

VCC

DQ5

DQ6

DQ7

DQ8

NC

VSS

DQ16

DQ15

DQ14

DQ13

VSS

DQ12

DQ11

DQ10

DQ9

NC

LCAS

UCAS

OE

50

49

48

47

46

45

44

43

42

41

40

36

35

34

33

32

31

30

29

1

2

3

4

5

6

7

8

9

10

11

15

16

17

18

19

20

21

22

TSOP II

23

24

25

28

27

26

NC

WE

RAS

NC

A0

A1

A2

A3

VCC

A9

A8

A7

A6

A5

A4

VSS

Pin designation

Pin(s)

Description

A0 to A9

Address inputs

RAS

Row address strobe

DQ1 to DQ16

Input/output

OE

Output enable

WE

Write enable

UCAS

Column address strobe, upper byte

LCAS

Column address strobe, lower byte

VCC

Power

VSS

Ground

Selection guide

Symbol

AS4C1M16F5-50

AS4C1M16F5-60

Unit

Maximum RAS access time

tRAC

50

60

ns

Maximum column address access time

tAA

25

30

ns

Maximum CAS access time

tCAC

13

17

ns

Maximum output enable (OE) access time

tOEA

13

15

ns

Minimum read or write cycle time

tRC

84

104

ns

Minimum fast page mode cycle time

tPC

20

25

ns

Maximum operating current

ICC1

170

160

mA

Maximum CMOS standby current

ICC5

2.0

mA

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