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SA56004HDP Datasheet(PDF) 4 Page - NXP Semiconductors |
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SA56004HDP Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 23 page Philips Semiconductors Product data sheet SA56004X ±1 °C accurate, SMBus-compatible, 8-pin, remote/local digital temperature sensor with over temperature alarms 2004 Oct 06 4 PIN CONFIGURATION SO8 and TSSOP8 SL02014 1 2 3 4 8 7 6 5 TOP VIEW VDD D+ D– T_CRIT SCLK SDATA ALERT GND SA56004X Figure 2. Pin configuration. PIN DESCRIPTION PIN SYMBOL DESCRIPTION 1 VDD Positive supply voltage. DC voltage from 3.0 V to 5.5 V. 2 D+ Diode current source (anode). 3 D– Diode sink current (cathode). 4 T_CRIT T_CRIT alarm is open drain, active-LOW output which requires an external pull-up resistor. It functions as a system interrupt or power shutdown. 5 GND Power supply ground. 6 ALERT ALERT alarm is an open drain, active-LOW output which requires an external pull-up resistor. It functions as an interrupt indicating that the temperature of the on-chip or remote diode is above or below programmed over temperature or under temperature thresholds. 7 SDATA SMBus/I2C-bus bi-directional data line. This is an open drain output which requires an external pull-up resistor. 8 SCLK SMBus/I2C-bus clock input which requires an external pull-up resistor. MAXIMUM RATINGS All voltages are referenced to GND. SYMBOL PARAMETER MIN. MAX. UNIT VDD Supply voltage –0.3 +6 V Voltage at SDATA, SCLK, ALERT, T_CRIT –0.3 +6 V VD+ Voltage at Positive diode input –0.3 VDD + 0.3 V VD– Voltage at Negative diode input –0.3 +0.8 V Sink current at SDATA, SCLK, ALERT, T_CRIT –1 50 mA ID+ D+ input current –1 1 mA PD Power dissipation SO8 package (derate 5.9 mW/ °C above Tamb = 70 °C) – 471 mW TSSOP8 package (derate 8.3 mW/ °C above Tamb = 70 °C) – 664 mW Vesd ESD Human Body Model (Note 1) – 2000 V Machine Model (Note 1) – 200 V Tj(max) Maximum junction temperature – +150 °C Tstg Storage temperature range –65 +165 °C NOTES: 1. The D+ and D– pins are 1000 V HBM and 100 V MM due to the higher sensitivity of the analog pins that introduces a limitation to the circuit protection structure. |
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