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STANDARD
MICROCIRCUIT DRAWING
DEFENSE SUPPLY CENTER COLUMBUS
COLUMBUS, OHIO 43216-5000
SIZE
A
5962-90899
REVISION LEVEL
C
SHEET
7
DSCC FORM 2234
APR 97
TABLE I. Electrical performance characteristics - Continued.
Test
Symbol
Conditions
-55
C T +125C 1/
C
4.5 V
V
5.5 V
CC
unless otherwise specified
Group A
Subgroups
Device
type
Limits
Units
Min
Max
DC CHARACTERISTICS - Continued
V
erase current
PP
IPP3
V
= V
erasure in progress
PP
PPH
1, 2, 3
All
30 2/
mA
Low level input
voltage
VIL
1, 2, 3
All
-0.5 2/
0.8
V
High level input
voltage (TTL)
VIH1
1, 2, 3
All
2.0
V
+ 0.5
CC
2/
V
High level input
voltage (CMOS)
VIH2
1, 2, 3
All
0.7 VCC V
+ 0.5
CC
2/
V
Low level output
voltage
VOL
I
= 2.1 mA, V
= V
min
OL
CC
CC
1, 2, 3
All
0.45
V
High level output
voltage (TTL)
VOH1
I
= -2.5 mA, V
= V
min
OH
CC
CC
1, 2, 3
All
2.4
V
High level output
voltage (CMOS)
VOH2
I
= -2.5 mA, V
= V
min
OH
CC
CC
1, 2, 3
All
0.85 VCC
V
VOH3
I
= -100 µA, V
= V
min
OH
CC
CC
V
- 0.4
CC
2/
V
A9 auto select
voltage
VID
A9 = VID
1, 2, 3
All
11.5
13.0
V
A9 auto select
current
IID
A9 = V
max, V
= V
max
ID
CC
CC
1, 2, 3
All
500 2/
µA
V
during read
PP
only operations
VPPL
NOTE: erase/program are
inhibited when V
= V
PP
PPL
1, 2, 3
All
0
V
+ 2.0
CC
2/
V
V
during read/write
PP
operations
VPPH
1, 2, 3
All
11.4
12.6
V
Functional tests
See 4.4.1d
7, 8A, 8B
All
See footnotes at end of table.