IS62LV5128LL-85B datasheet(4/10 Pages) ISSI

Part #	IS62LV5128LL-85B

Description	512K x 8 LOW POWER and LOW Vcc CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

Direct Link	http://www.issi.com

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4 / 10 page

4

Integrated Silicon Solution, Inc. — 1-800-379-4774

Rev. D

05/04/01

IS62LV5128LL

ISSI®

READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)

-70

-85

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

tRC

Read Cycle Time

70

—

85

—

ns

tAA

Address Access Time

—

70

—

85

ns

tOHA

Output Hold Time

10

—

15

—

ns

tACE

CE Access Time

—

70

—

85

ns

tDOE

OE Access Time

—

35

—

40

ns

tHZOE(2)

OE to High-Z Output

—

25

—

25

ns

tLZOE(2)

OE to Low-Z Output

5

—

5

—

ns

tLZCE(2)

CE to Low-Z Output

10

—

10

—

ns

tHZCE(2)

CE to High-Z Output

0

25

0

25

ns

Notes:

1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0.4V to 2.2V and

output loading specified in Figure 1.

2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.

POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)

-70

-85

Symbol Parameter

Test Conditions

Min.

Max.

Min.

Max.

Unit

ICC

Vcc Dynamic

VCC = Max., CE = VIL

Com.

—

40

—

35

mA

Operating

IOUT = 0 mA, f = fMAX

Ind.

—

45

—

40

Supply Current

ICC1

Operating Supply

VCC = Max.,

Com.

—

5

—

5mA

Current

IOUT = 0 mA, f = 0

Ind.

—

5

—

5

ISB1

TTL Standby

VCC = Max.,

Com.

—

0.4

—

0.4

mA

Current

VIN = VIH or VIL,Ind.

—

1.0

—

1.0

(TTL Inputs)

CE1

≥ VIH, f = 0

ISB2

CMOS Standby

VCC = Max., f = 0

Com.

—

10

—

10

µA

Current

CE1

≥ VCC – 0.2V,

Ind.

—

10

—

10

(CMOS Inputs)

or VIN

≥ VCC – 0.2V,

VIN

≤ 0.2V

Note:

1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.

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IS62LV5128LL-85B Datasheet(PDF) 4 Page - Integrated Silicon Solution, Inc

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