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ACTT2X-800ETN Datasheet(PDF) 8 Page - WeEn Semiconductors

Part # ACTT2X-800ETN
Description  Enhanced, high temperature ACTT power switch
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Manufacturer  WEEN [WeEn Semiconductors]
Direct Link  http://www.ween-semi.com
Logo WEEN - WeEn Semiconductors

ACTT2X-800ETN Datasheet(HTML) 8 Page - WeEn Semiconductors

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WeEn Semiconductors
ACTT2X-800ETN
Enhanced, high temperature ACTT power switch
ACTT2X-800ETN
All information provided in this document is subject to legal disclaimers.
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
6 September 2018
8 / 14
10. Characteristics
Table 7. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
VD = 12 V; IT = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IT = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
IGT
gate trigger current
VD = 12 V; IT = 100 mA; LD- G-;
Tj = 25 °C; Fig. 8
-
-
10
mA
VD = 12 V; IG = 100 mA; LD+ G+;
Tj = 25 °C; Fig. 9
-
-
25
mA
VD = 12 V; IG = 100 mA; LD+ G-;
Tj = 25 °C; Fig. 9
-
-
35
mA
IL
latching current
VD = 12 V; IG = 100 mA; LD- G-;
Tj = 25 °C; Fig. 9
-
-
25
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 10
-
-
10
mA
VT
on-state voltage
IT = 3 A; Tj = 25 °C; Fig. 11
-
-
2
V
VD = 12 V; IT = 100 mA; Tj = 25 °C;
Fig. 12
-
0.8
1
V
VGT
gate trigger voltage
VD = 400 V; IT = 100 mA; Tj = 150 °C;
Fig. 12
0.2
0.5
-
V
VD = 800 V; Tj = 25 °C
-
-
10
µA
ID
off-state current
VD = 800 V; Tj = 150 °C
-
-
2
mA
VCL
clamping voltage
ICL = 0.1 mA; tp = 1 ms; Tj = 25 °C
850
-
-
V
Dynamic characteristics
VDM = 536 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
500
-
-
V/µs
dVD/dt
rate of rise of off-state
voltage
VDM = 536 V; Tj = 150 °C; exponential
waveform; gate open circuit
200
-
-
V/µs
VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
dVcom/dt = 20 V/µs; gate open circuit;
snubberless condition
1
-
-
A/ms
VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
dVcom/dt = 10 V/µs; gate open circuit
1.5
-
-
A/ms
dIcom/dt
rate of change of
commutating current
VD = 400 V; Tj = 150 °C; IT(RMS) = 2 A;
dVcom/dt = 1 V/µs; gate open circuit
3
-
-
A/ms


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