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Q67040-S4281 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # Q67040-S4281
Description  FAST IGBT IN NPT-TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI-PARALLEL EmCon DIODE
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

Q67040-S4281 Datasheet(HTML) 7 Page - Infineon Technologies AG

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SKW15N120
Power Semiconductors
7Jul-02
0A
10A
20A
30A
40A
50A
0mJ
2mJ
4mJ
6mJ
8mJ
10mJ
12mJ
14mJ
E
on*
E
off
E
ts*
0
Ω
25
Ω
50
Ω
75
Ω
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
E
ts*
E
on*
E
off
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, RG = 3 3
Ω,
dynamic test circuit in Fig.E )
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150
°C,
VCE = 800V, VGE = +15V/0V, IC = 15A,
dynamic test circuit in Fig.E )
-50°C
0°C
50°C
100°C
150°C
0mJ
1mJ
2mJ
3mJ
4mJ
E
ts*
E
on*
E
off
1µs
10µs
100µs
1ms
10ms 100ms
1s
10
-3K/W
10
-2K/W
10
-1K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D=0.5
Tj, JUNCTION TEMPERATURE
tp, PULSE WIDTH
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 15A, RG = 3 3
Ω,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
*) Eon and Ets include losses
due to diode recovery.
C1=
τ
1 / R 1
R1
R2
C2=
τ
2 / R 2
R
,( K/ W )
τ , (s )
0.09751
0.67774
0.29508
0.11191
0.13241
0.00656
0.10485
0.00069


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