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BYV410X-600 Datasheet(PDF) 1 Page - WeEn Semiconductors |
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BYV410X-600 Datasheet(HTML) 1 Page - WeEn Semiconductors |
1 / 11 page ![]() BYV410X-600 Dual enhanced ultrafast power diode Rev. 02 - 7 November 2018 Product data sheet 1. General description Dual enhanced ultrafast power diode in a SOT186A (TO-220AB) plastic package. 2. Features and benefits • High thermal cycling performance • Isolated package • Low thermal resistance • Soft recovery characteristic minimizes power consuming oscillations • Very low on-state losses 3. Applications • Dual mode (DCM and CCM) PFC • Power Factor Correction (PFC) for Interleaved Topology 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit VR reverse voltage DC - - 600 V tp = 8.3 ms; Tj(init) = 25 °C; SIN; per diode - - 132 A IFSM non-repetitive peak forward current tp = 10 ms; Tj(init) = 25 °C; SIN; per diode - - 120 A Static characteristics IF = 10 A; Tj = 25 °C; Fig. 4 - 1.4 2.1 V VF forward voltage IF = 10 A; Tj = 150 °C - 1.3 1.9 V Dynamic characteristics trr reverse recovery time IF = 1 A; VR = 30 V; dIF/dt = 100 A/µs; Tj = 25 °C; Fig. 5 - 20 35 ns |
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