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EC103D1W Datasheet(HTML) 8 Page - WeEn Semiconductors

Part No. EC103D1W
Description  SCR
Download  13 Pages
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Maker  WEEN [WeEn Semiconductors]
Homepage  http://www.ween-semi.com
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EC103D1W Datasheet(HTML) 8 Page - WeEn Semiconductors

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WeEn Semiconductors
EC103D1W
SCR
EC103D1W
All information provided in this document is subject to legal disclaimers.
© WeEn Semiconductors Co., Ltd. 2018. All rights reserved
Product data sheet
21 August 2018
8 / 13
9. Characteristics
Table 6. Characteristics
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; Tj = 25 °C; Fig. 9
-
3
12
µA
IL
latching current
VD = 12 V; IG = 0.1 A; Tj = 25 °C;
Fig. 10
-
2
6
mA
IH
holding current
VD = 12 V; Tj = 25 °C; Fig. 11
-
2
5
mA
VT
on-state voltage
IT = 1 A; Tj = 25 °C; Fig. 12
-
1.2
1.35
V
VD = 12 V; IT = 0.1 A; Tj = 25 °C;
Fig. 13
-
0.5
0.8
V
VGT
gate trigger voltage
VD = 400 V; IT = 0.1 A; Tj = 125 °C;
Fig. 13
0.2
0.3
-
V
ID
off-state current
VD = 400 V; Tj = 125 °C
-
0.05
0.1
mA
IR
reverse current
VR = 400 V; Tj = 125 °C
-
0.05
0.1
mA
Dynamic characteristics
dVD/dt
rate of rise of off-state
voltage
VDM = 268 V; Tj = 125 °C; (VDM = 67%
of VDRM); exponential waveform; gate
open circuit
-
150
-
V/µs
Tj (°C)
-50
150
100
0
50
aaa-007702
1
2
3
0
IGT
IGT(25°C)
Fig. 9. Normalized gate trigger current as a function of
junction temperature
Tj (°C)
-50
150
100
0
50
aaa-007703
1
2
3
0
IL
IL(25°C)
Fig. 10. Normalized latching current as a function of
junction temperature


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