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PHE13005X Datasheet(PDF) 9 Page - WeEn Semiconductors |
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PHE13005X Datasheet(HTML) 9 Page - WeEn Semiconductors |
9 / 14 page WeEn Semiconductors PHE13005X Silicon diffused power transistor PHE13005X Product data sheet All information provided in this document is subject to legal disclaimers. © WeEn Semiconductors Co., Ltd. 2018. All rights reserved 26 April 2018 9 / 13 VCC = 300 V; VBB = - 5 V; LC = 200 μH; LB = 1 μH Fig. 15. Test circuit for inductive load switching Fig. 14. Switching times waveforms for inductive load 10. Isolation characteristics Table 8. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; clean and dust free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;Th = 25 °C - - 2500 V Cisol isolation capacitance from collector to external heatsink; f = 1 MHz; Th = 25 °C - 10 - pF |
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