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CAT5110SBI-50-T10 Datasheet(PDF) 5 Page - Catalyst Semiconductor |
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CAT5110SBI-50-T10 Datasheet(HTML) 5 Page - Catalyst Semiconductor |
5 / 11 page CAT5110/5118/5119 5 Doc. No. 2120, Rev. A Operating Temperature Range ........... -40 °C to +85˚C Junction Temperature ...................................... +150˚C Storage Temperature Range ............ -65˚C to +150˚C Soldering Temperature (soldering, 10s) .......... +300˚C *(derate 3.1mW/˚C above TA = +70˚C) COMMENT Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions outside of those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum rating for extended periods may affect device performance and reliability. ABSOLUTE MAXIMUM RATINGS VDD to GND........................................... -0.3 V to +6 V All Other Pins to GND .............. -0.3 V to (VDD + 0.3) V Input and Output Latch-Up Immunity ............ +200 mA Maximum Continuous Current into H, L and W 100k Ω ................................................................... +0.6 mA 50k Ω...................................................................... +1.3 mA 10k Ω...................................................................... +1.3 mA Continuous Power Dissipation (TA = +70˚C) 5-pin SC70* .................................................... 247 mW 6-pin SC70* .................................................... 245 mW ELECTRICAL CHARACTERISTICS (VDD = 2.7 V to 5.5 V, VH = VDD, VL = 0, TA = -40˚C to 85˚C. Typical values are at VDD = 2.7 V, TA = 25˚C, unless otherwise noted). l o b m y Sr e t e m a r a Ps n o i t i d n o Cn i Mp y Tx a Ms t i n U e c n a m r o f r e P C D n o i t u l o s e R2 3s p a T e c n a t s i s e R d n E - o t - d n E 0 1 1 5 T A C0 80 0 10 2 1 k Ω 8 1 1 5 T A C0 40 50 6 9 1 1 5 T A C8 0 12 1 C T R o c p m e T e c n a t s i s e R d n E - o t - d n E 0 0 2C ˚ / m p p o c p m e T e c n a t s i s e R c i r t e m o i t a R 5C ˚ / m p p L N Iy t i r a e n i l n o N l a r g e t n I + 5 . 0+1B S L L N Dy t i r a e n i l n o N l a i t n e r e f f i D +1B S L r o r r E e l a c S - l l u F + 1 . 0B S L r o r r E e l a c S - o r e Z 1B S L R W e c n a t s i s e R r e p i W 0 0 20 0 6 Ω s t u p n I l a t i g i D V H I e g a t l o V h g i H t u p n I V x 7 . 0 D D V V L I e g a t l o V w o L t u p n I V x 3 . 0 D D V ) 2 , 1 s e r u g i F ( s c i t s i r e t c a r a h C g n i m i T t U C / U D p u t e S S C o t e d o M5 2s n t I C / U o t S C D p u t e S p e t S0 5s n t C I / U o t S C D d l o H p e t S5 2s n t L I / U D d o i r e P w o L p e t S5 2s n t H I / U D d o i r e P h g i H p e t S5 2s n f E L G G O T / p U n w o D e t a R e l g g o T ) 1 ( 1z H M t E L T T E S e m i T g n i l t t e S t u p t u O ) 2 ( k 0 0 1 Ω r o t s i s e r e l b a i r a v F p 0 1 = L C , n o i t a r u g i f n o c 1 s µ k 0 0 1 Ω r e t e m o i t n e t o p F p 0 1 = L C , n o i t a r u g i f n o c 5 2 . 0 |
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