BS616LV8016FC datasheet(3/8 Pages) BSI

Part #	BS616LV8016FC

Description	Very Low Power/Voltage CMOS SRAM 512K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 2.1

Jan.

2004

3

R0201-BS616LV8016

SYMBOL

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

VDR

Vcc for Data Retention

CE1 ≧ Vcc - 0.2V or CE2≦0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.5

--

V

ICCDR

Data Retention Current

CE1 ≧ Vcc - 0.2V or CE2≦0.2V,

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

0.8

2.5

uA

tCDR

Chip Deselect to Data

Retention Time

0--

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC (2)

--

ns

DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

1. Vcc = 1.5V, TA = + 25OC2. tRC = Read Cycle Time

3. IccDR(Max.) is 1.3uA at TA=70OC.

DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )

BSI

BS616LV8016

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP.

(1)

MAX.

UNITS

Vcc=3V

-0.5

--

0.8

VIL

Guaranteed Input Low

Voltage(3)

Vcc=5V

-0.5

--

0.8

V

Vcc=3V

2.0

--

Vcc+0.3

VIH

Guaranteed Input High

Voltage(3)

Vcc=5V

2.2

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE1 = VIH, or CE2 =ViL, or

OE = VIH, VI/O = 0V to Vcc

--

1

uA

Vcc=3V

--

0.4

VOL

Output Low Voltage

Vcc = Max, IOL= 2mA

Vcc=5V

--

0.4

V

Vcc=3V

2.4

--

VOH

Output High Voltage

Vcc = Min, IOH= -1mA

Vcc=5V

2.4

--

V

Vcc=3V

--

25

ICC

Operating Power Supply

Current

CE1 = VIL and CE2 = VIH

, IDQ = 0mA, F = Fmax(2)

Vcc=5V

--

61

mA

Vcc=3V

--

1

ICCSB

Standby Current-TTL

CE1 = VIH or CE2 = VIL

, IDQ = 0mA

Vcc=5V

--

2

mA

Vcc=3V

--

1.5

10

ICCSB1

Standby Current-CMOS

CE1≧Vcc-0.2V or

CE2≦0.2V ;VIN≧Vcc - 0.2V

or VIN≦0.2V

Vcc=5V

--

8.0

110

uA

LOW V

CC DATA RETENTION WAVEFORM (1) ( CE1 Controlled )

CE1

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIH

Vcc

VDR

1.5V

≥

CE1

Vcc - 0.2V

≥

LOW V

CC DATA RETENTION WAVEFORM (2) ( CE2 Controlled )

CE2

Data Retention Mode

Vcc

t CDR

Vcc

t R

VIL

Vcc

VDR ≧ 1.5V

CE2 ≦ 0.2V

(4)

(5)

70ns

1. Typical characteristics are at TA = 25oC.

2. Fmax = 1/t

RC .

3. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

4. Icc_Max. is 31mA(@3.0V) / 76mA(@5.0V) under 55ns operation.

5.IccsB1 is 5uA/55uA at Vcc=3.0V/5.0V and TA=70oC.

(3)

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