BS616UV2019AC datasheet(3/9 Pages) BSI

Part #	BS616UV2019AC

Description	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit

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Manufacturer	BSI [Brilliance Semiconductor]

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Revision 1.1

Jan.

2004

3

R0201-BS616UV2019

SYMBOL

PARAMETER

TEST CONDITIONS

MIN.

TYP. (1)

MAX.

UNITS

VDR

Vcc for Data Retention

CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V

(3)

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

1.0

--

V

ICCDR

Data Retention Current

CE ≧ Vcc - 0.2V or CE2 ≦ 0.2V

(3)

VIN ≧ Vcc - 0.2V or VIN ≦ 0.2V

--

0.1

1.0

uA

tCDR

Chip Deselect to Data

Retention Time

0

--

ns

tR

Operation Recovery Time

See Retention Waveform

TRC

(2)

--

ns

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

CIN

Input

Capacitance

VIN=0V

6

pF

CDQ

Input/Output

Capacitance

VI/O=0V

8

pF

RANGE

AMBIENT

TEMPERATURE

Vcc

Commercial

0 O C to +70 O C1.8V ~ 3.6V

Industrial

-40 O C to +85 O C1.9V ~ 3.6V

1. Typical characteristics are at TA = 25oC.

2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.

3. Fmax = 1/t

RC.

4. 48B BGA ignore CE2 condition.

5.IccsB1 is 2.0uA/3.0uA at Vcc=2.0V/3.0V and TA=70oC.

6. VIL = -1.5V for pulse width less than 30ns

DATA RETENTION CHARACTERISTICS ( TA = -40 to + 85oC )

1. Vcc = 1.0V, TA = + 25OC

2.t

RC = Read Cycle Time

3. 48B BGA ignore CE2 condition.

4. IccDR is 0.7uA at TA=70oC.

ABSOLUTE MAXIMUM RATINGS(1)

OPERATING RANGE

CAPACITANCE (1) (TA = 25oC, f = 1.0 MHz)

1. Stresses greater than those listed under ABSOLUTE MAXIMUM

RATINGS may cause permanent damage to the device. This is a

stress rating only and functional operation of the device at these

or any other conditions above those indicated in the operational

sections of this specification is not implied. Exposure to absolute

maximum rating conditions for extended periods may affect

reliability.

1. This parameter is guaranteed and not 100% tested.

DC ELECTRICAL CHARACTERISTICS ( TA = -40 to + 85oC )

SYMBOL

PARAMETER

RATING

UNITS

V TERM

Terminal Voltage with

Respect to GND

-0.5 to

Vcc+0.5

V

T BIAS

Temperature Under Bias

-40 to +85

O C

T STG

Storage Temperature

-60 to +150

O C

P T

Power Dissipation

1.0

W

I OUT

DC Output Current

20

mA

BSI

BS616UV2019

PARAMETER

NAME

PARAMETER

TEST CONDITIONS

MIN. TYP. (1) MAX.

UNITS

Vcc=2.0V

0.6

VIL

Guaranteed Input Low

Voltage(2)

Vcc=3.0V

-0.3

--

0.8

V

Vcc=2.0V

1.4

VIH

Guaranteed Input High

Voltage(2)

Vcc=3.0V

2.0

--

Vcc+0.3

V

IIL

Input Leakage Current

Vcc = Max, VIN = 0V to Vcc

--

1

uA

ILO

Output Leakage Current

Vcc = Max, CE = V

IH , or CE2

(4)

= V

IL,

or OE = V

IH, VI/O = 0V to VCC

--

1

uA

Vcc=2.0V

VOL

Output Low Voltage

IOL = 0.1mA ; Vcc=Max

Vcc=3.0V

--

0.4

V

Vcc=2.0V

VOH

Output High Voltage

IOH = -1.0mA ; Vcc=Min

Vcc=3.0V

2.4

--

V

Vcc=2.0V

--

10

ICC

Operating Power Supply

Current

CE = V

IL

,IDQ = 0mA, F= Fmax(3)

Vcc=3.0V

--

13

mA

Vcc=2.0V

--

0.1

ICCSB

Standby Current 　TTL

CE = V

IH

, IDQ = 0mA

Vcc=3.0V

--

0.5

mA

Vcc=2.0V

--

0.20

3.0

ICCSB1

Standby Current　CMOS

CE ≧Vcc-0.2V,

VIN ≧Vcc - 0.2V or VIN ≦ 0.2V

Vcc=3.0V

--

0.30

5.0

uA

CE2 = V

IH

(4)

or CE2 = V

IL

(4)

or CE2 ≦ 0.2V,(4)

(5)

(4)

IOH = -0.1mA ; Vcc=Min

IOL = 2.0mA ; Vcc=Max

Vcc-0.2

(6)

0.2

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