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BS616UV2019TC-10 Datasheet(PDF) 5 Page - Brilliance Semiconductor

Part # BS616UV2019TC-10
Description  Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616UV2019TC-10 Datasheet(HTML) 5 Page - Brilliance Semiconductor

  BS616UV2019TC-10 Datasheet HTML 1Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 2Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 3Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 4Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 5Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 6Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 7Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 8Page - Brilliance Semiconductor BS616UV2019TC-10 Datasheet HTML 9Page - Brilliance Semiconductor  
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Revision 1.1
Jan.
2004
5
R0201-BS616UV2019
BSI
BS616UV2019
READ CYCLE2 (1,3,4)
t CLZ
t CHZ(5,6)
D
OUT
CE
(5,6)
t ACS1
CE2
tACS2(6)
READ CYCLE3 (1,4)
t OH
t RC
t OE
D
OUT
LB,UB
CE
OE
ADDRESS
t CLZ
(5,6)
t ACS1
t CHZ
(1,5,6)
t OHZ (5)
t OLZ
t AA
t BDO
t BA
t BE
CE2
t ACS2(6)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL and CE2 = VIH.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL
.
5. The parameter is guaranteed but not 100% tested.
6. 48B BGA ignore this parameters related to CE2 .
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH


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