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BS616UV4016EI-10 Datasheet(PDF) 6 Page - Brilliance Semiconductor |
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BS616UV4016EI-10 Datasheet(HTML) 6 Page - Brilliance Semiconductor |
6 / 10 page BSI BS616UV4016 6 R0201-BS616UV4016 Revision 1.3 Sep. 2005 READ CYCLE 3 (1, 4) NOTES: 1. WE is high in read Cycle. 2. Device is continuously selected when CE = VIL. 3. Address valid prior to or coincident with CE transition low. 4. OE = VIL. 5. Transition is measured ± 500mV from steady state with CL = 5pF. The parameter is guaranteed but not 100% tested. tOH tRC tOE tBE tBDO DOUT CE OE ADDRESS tCLZ (5) tACS tCHZ (1,5) tOHZ (5) tOLZ tAA LB, UB tBA |
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