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BS616UV4016DIG10 Datasheet(PDF) 1 Page - Brilliance Semiconductor |
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BS616UV4016DIG10 Datasheet(HTML) 1 Page - Brilliance Semiconductor |
1 / 10 page BSI Ultra Low Power/High Speed CMOS SRAM 256K X 16 bit BS616UV4016 R0201-BS616UV4016 1 Revision 1.3 Sep. 2005 n FEATURES Ÿ Wide V CC operation voltage : C-grade : 1.8V ~ 3.6V I-grade : 1.9V ~ 3.6V (VCC_min.=1.65V at 25 OC) Ÿ Ultra low power consumption : VCC = 2.0V C-grade : 10mA(Max.) operating current I-grade : 12mA(Max.) operating current 0.3uA (Typ.) CMOS standby current VCC = 3.0V C-grade : 13mA(Max.) operating current I-grade : 15mA(Max.) operating current 0.45uA (Typ.) CMOS standby current Ÿ High speed access time : -85 85ns (Max.) -10 100ns (Max.) Ÿ Automatic power down when chip is deselected Ÿ Easy expansion with CE and OE options Ÿ I/O Configuration x8/x16 selectable by LB and UB pin. Ÿ Three state outputs and TTL compatible Ÿ Fully static operation Ÿ Data retention supply voltage as low as 1.2V n DESCRIPTION The BS616UV4016 is a high performance, ultra low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates form a wide range of 1.8V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with typical CMOS standby current of 0.3uA at 2.0V/25 OC and maximum access time of 85ns at 85OC. Easy memory expansion is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state output drivers. The BS616UV4016 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616UV4016 is available in DICE form, JEDEC standard 44-pin TSOP Type II and 48-ball BGA package. n PRODUCT FAMILY POWER DISSIPATION SPEED (ns) STANDBY (ICCSB1, Max) Operating (ICC, Max) PRODUCT FAMILY OPERATING TEMPERATURE VCC RANGE C-grade : 1.8~3.6V I-grade : 1.9~3.6V VCC=3.0V VCC=2.0V VCC=3.0V VCC=2.0V PKG TYPE BS616UV4016DC DICE BS616UV4016EC TSOP2-44 BS616UV4016AC +0 OC to +70OC 1.8V ~ 3.6V 85/100 6.0uA 3.0uA 13mA 10mA BGA-48-0608 BS616UV4016DI DICE BS616UV4016EI TSOP2-44 BS616UV4016AI -40 OC to +85OC 1.9V ~ 3.6V 85/100 8.0uA 5.0uA 15mA 12mA BGA-48-0608 n PIN CONFIGURATIONS n BLOCK DIAGRAM Brilliance Semiconductor, Inc. reserves the right to modify document contents without notice. G H F E D C B A 1 2 3 4 5 6 A9 A11 A10 NC A12 A14 A13 A15 WE IO13 IO5 IO7 IO6 A17 A16 A7 VSS VCC IO12 IO11 IO4 IO3 NC A5 OE A3 A0 A6 A4 A1 A2 NC LB IO10 IO1 CE IO2 IO0 48-ball BGA top view UB IO8 IO9 VSS VCC IO14 IO15 NC NC A8 A4 A3 A2 A1 A0 CE IO0 IO1 IO2 IO3 VCC GND IO4 IO5 IO6 IO7 WE A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 BS616UV4016EC BS616UV4016EI 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 A5 A6 A7 OE UB LB IO15 IO14 IO13 IO12 GND VCC IO11 IO10 IO9 IO8 NC A8 A9 A10 A11 A12 Address Input Buffer Row Decoder Memory Array 1024 x 4096 Column I/O Write Driver Sense Amp Column Decoder Address Input Buffer Data Input Buffer Control IO0 . . . . . . IO15 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 16 16 16 16 8 256 2048 1024 10 A13 Data Output Buffer CE WE OE UB LB VCC GND A14 . . . . . . A15 A16 A17 A0 A2 A1 |
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