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BS616UV4016ACP10 Datasheet(PDF) 6 Page - Brilliance Semiconductor

Part # BS616UV4016ACP10
Description  Ultra Low Power/High Speed CMOS SRAM 256K X 16 Bit
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Manufacturer  BSI [Brilliance Semiconductor]
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BS616UV4016ACP10 Datasheet(HTML) 6 Page - Brilliance Semiconductor

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BSI
BS616UV4016
6
R0201-BS616UV4016
Revision
1.3
Sep.
2005
READ CYCLE 3
(1, 4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL.
5. Transition is measured ± 500mV from steady state with CL = 5pF.
The parameter is guaranteed but not 100% tested.
tOH
tRC
tOE
tBE
tBDO
DOUT
CE
OE
ADDRESS
tCLZ
(5)
tACS
tCHZ
(1,5)
tOHZ
(5)
tOLZ
tAA
LB, UB
tBA


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