MAXIMUM RATINGS: (TA=25°C)

SYMBOL

UNITS

Collector-Base Voltage

VCBO

30

V

Collector-Emitter Voltage

VCEO

25

V

Emitter-Base Voltage

VEBO

4.5

V

Collector Current

IC

50

mA

Power Dissipation

PD

350

mW

Operating and Storage

Junction Temperature

TJ,Tstg

-65 to +150

°C

Thermal Resistance

ΘJA

357

°C/W

ELECTRICAL CHARACTERISTICS PER TRANSISTOR: (TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

ICBO

VCB=15V

50

nA

IEBO

VEB=4.5V

100

nA

BVCBO

IC=100µA

30

V

BVCEO

IC=1.0mA

25

V

BVEBO

IE=100µA

4.5

V

VCE(SAT)

IC=10mA, IB=1.0mA

0.5

V

VBE(SAT)

IC=10mA, IB=1.0mA

0.8

V

hFE

VCE=5.0V, IC=0.1mA

400

1200

hFE

VCE=5.0V, IC=1.0mA

450

hFE

VCE=5.0V, IC=10mA

400

fT

VCE=5.0V, IC=500µA, f=20MHz

50

MHz

Cob

VCB=5.0V, IE=0, f=1.0MHz

4.0

pF

Cib

VBE=0.5V, IC=0, f=1.0MHz

10

pF

hfe

VCE=5.0V, IC=1.0mA, f=1.0kHz

450

1800

NF

VCE=5.0V, IC=100µA, RS=10kΩ

f=10Hz to 15.7kHz

2.0

dB

MATCHING CHARACTERISTICS:

SYMBOL

TEST CONDITIONS

MIN

MAX

UNITS

hFE1/hFE2*VCE=5.0V, IC=1.0mA

0.9

1.0

|VBEON1-VBEON2|VCE=5.0V, IC=100µA

5.0

mV

* The lowest hFE reading is taken as hFE1.

CMKT5089M10

SURFACE MOUNT

DUAL NPN SILICON

MATCHED hFE TRANSISTORS

SOT-363 CASE

Central

Semiconductor Corp.

TM

R2 (7-August 2003)

DESCRIPTION:

The CENTRAL SEMICONDUCTOR

CMKT5089M10 consists of two (2) individual,

isolated 5089 NPN silicon transistors with

manufactured by the epitaxial planar process and

epoxy molded in an SOT-363 surface mount

package. The CMKT5089M10 has been designed

for applications requiring high gain and low noise.

MARKING CODE: C9M0