AS4C256K16E0-30JC datasheet(6/24 Pages) ALSC

Part #	AS4C256K16E0-30JC

Description	5V 256Kx16 CMOS DRAM (EDO)

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Manufacturer	ALSC [Alliance Semiconductor Corporation]

Direct Link	https://www.alliancememory.com

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6 / 24 page

®

AS4C256K16E0

4/11/01; v.1.1

Alliance Semiconductor

6 of 24

EDO page mode cycle

Shaded areas contain advance information.

Refresh cycle

Shaded areas contain advance information.

Output enable

Shaded areas contain advance information.

Self refresh cycle

Shaded areas contain advance information.

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tPC

Read or write cycle time

12

–14–25

–

ns

14

tCAP

Access time from CAS precharge

–

19

–

21

–

23

ns

13

tCP

CAS

precharge time

3

–4

–

5

–

ns

tPCM

EDO page mode RMW cycle

56

–58–60

–

ns

tCRW

Page mode CAS pulse width (RMW)

44

–46–50

–

ns

tRASP

RAS

pulse width

30

75K

35

75K

50

75K

ns

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tCSR

CAS setup time (CAS-before-RAS)

10

–

10

–

10

–

ns

3

tCHR

CAS

hold time (CAS-before-RAS)

7

–

8

–

10

–

ns

3

tRPC

RAS precharge to CAS hold time

0

–

0

–

0

–

ns

tCPT

CAS

precharge time

(CAS-before-RAS counter test)

8

–

8

–

8

–

ns

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tROH

RAS hold time referenced to OE

5

–5

–

5

–

ns

tOEA

OE

access time

–

10

–

10

–

10

ns

tOED

OE

to data delay

5

–5

–

8

–

ns

tOEZ

Output buffer turnoff delay from OE

–

8–

8

–

8

ns

8

tOEH

OE

command hold time

8

–8

–

8

–

ns

Std

Symbol

Parameter

-30

-35

-50

Unit

Notes

Min

Max

Min

Max

Min

Max

tRASS

RAS pulse width

(CBR self refresh)

100K

–

100K

–

100K

–

ns

tRPS

RAS precharge time

(CBR self refresh)

85

–85

–

85

–

ns

tCHS

CAS

hold time

(CBR self refresh)

30

–30

–

30

–

ns

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AS4C256K16E0-30JC Datasheet(PDF) 6 Page - Alliance Semiconductor Corporation

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