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A82DL1622UG-70IF Datasheet(PDF) 3 Page - AMIC Technology |
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A82DL1622UG-70IF Datasheet(HTML) 3 Page - AMIC Technology |
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3 / 57 page  A82DL16x2T(U) Series PRELIMINARY (May, 2005, Version 0.1) 2 AMIC Technology, Corp. GENERAL DESCRIPTION The A82DL16x2T(U) family consists of 16 megabit, 3.0 volt- only flash memory devices, organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. Word mode data appears on I/O0–I/O15; byte mode data appears on I/O0– I/O7. The device is designed to be programmed in-system with the standard 3.0 volt VCC supply, and can also be programmed in standard EPROM programmers. The device is available with an access time of 70ns. The devices are offered in 69-ball Fine-pitch BGA. Standard control pins—chip enable ( CE_F ), write enable ( WE ), and output enable ( OE )—control normal read and write operations, and avoid bus contention issues. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. Simultaneous Read/Write Operations with Zero Latency The Simultaneous Read/Write architecture provides simultaneous operation by dividing the memory space into two banks. The device can improve overall system performance by allowing a host system to program or erase in one bank, then immediately and simultaneously read from the other bank, with zero latency. This releases the system from waiting for the completion of program or erase operations. The A82DL16x2T(U) devices uses multiple bank archi- tectures to provide flexibility for different applications. Three devices are available with these bank sizes: Device Bank 1 Bank 2 DL1622 2 Mb 14 Mb DL1632 4 Mb 12 Mb DL1642 8 Mb 8 Mb A82DL16x2T(U) Features The device offers complete compatibility with the JEDEC single-power-supply Flash command set standard. Commands are written to the command register using standard microprocessor write timings. Reading data out of the device is similar to reading from other Flash or EPROM devices. The host system can detect whether a program or erase operation is complete by using the device status bits: RY/ BY pin, I/O7 ( Data Polling) and I/O6/I/O2 (toggle bits). After a program or erase cycle has been completed, the device automatically returns to reading array data. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-s y s t e m or via programming equipment. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both modes. |
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