Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.NET

X  

KMM5322104CKUG Datasheet(PDF) 4 Page - Samsung semiconductor

Part # KMM5322104CKUG
Description  2M x 32 DRAM SIMM using 2Mx8 , 2K Refresh, 5V
Download  15 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

KMM5322104CKUG Datasheet(HTML) 4 Page - Samsung semiconductor

  KMM5322104CKUG Datasheet HTML 1Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 2Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 3Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 4Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 5Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 6Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 7Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 8Page - Samsung semiconductor KMM5322104CKUG Datasheet HTML 9Page - Samsung semiconductor Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 15 page
background image
DRAM MODULE
KMM5322104CKU/CKUG
CAPACITANCE (TA = 25
°C, VCC=5V, f = 1MHz)
Item
Symbol
Min
Max
Unit
Input capacitance[A0-A10]
Input capacitance[W]
Input capacitance[RAS0]
Input capacitance[CAS0 - CAS3]
Input/Output capacitance[DQ0-31]
CIN1
CIN2
CIN3
CIN4
CDQ
-
-
-
-
-
35
40
40
20
20
pF
pF
pF
pF
pF
Test condition : Vih/Vil=2.4/0.8V, Voh/Vol=2.0/0.8V, output loading CL=100pF
Parameter
Symbol
-5
-6
Unit
Note
Min
Max
Min
Max
Random read or write cycle time
tRC
90
110
ns
Access time from RAS
tRAC
50
60
ns
3,4,10
Access time from CAS
tCAC
13
15
ns
3,4,5
Access time from column address
tAA
25
30
ns
3,10
CAS to output in Low-Z
tCLZ
3
3
ns
3
Output buffer turn-off delay from CAS
tCEZ
3
13
3
15
ns
6,11,12
Transition time(rise and fall)
tT
2
50
2
50
ns
2
RAS precharge time
tRP
30
40
ns
RAS pulse width
tRAS
50
10K
60
10K
ns
RAS hold time
tRSH
13
15
ns
CAS hold time
tCSH
40
50
ns
CAS pulse width
tCAS
8
10K
10
10K
ns
13
RAS to CAS delay time
tRCD
20
37
20
45
ns
4
RAS to column address delay time
tRAD
15
25
15
30
ns
10
CAS to RAS precharge time
tCRP
5
5
ns
Row address set-up time
tASR
0
0
ns
Row address hold time
tRAH
10
10
ns
Column address set-up time
tASC
0
0
ns
Column address hold time
tCAH
8
10
ns
Column address to RAS lead time
tRAL
25
30
ns
Read command set-up time
tRCS
0
0
ns
Read command hold time referenced to CAS
tRCH
0
0
ns
8
Read command hold time referenced to RAS
tRRH
0
0
ns
8
Write command hold time
tWCH
10
10
ns
Write command pulse width
tWP
10
10
ns
Write command to RAS lead time
tRWL
13
15
ns
Write command to CAS lead time
tCWL
8
10
ns
Data-in set-up time
tDS
0
0
ns
9
Data-in hold time
tDH
8
10
ns
9
Refresh period
tREF
32
32
ms
Write command set-up time
tWCS
0
0
ns
7
CAS setup time(CAS-before-RAS refresh)
tCSR
5
5
ns
CAS hold time(CAS-before-RAS refresh)
tCHR
10
10
ns
RAS precharge to CAS hold time
tRPC
5
5
ns
CAS precharge time (C-B-R counter test)
tCPT
20
20
ns
AC CHARACTERISTICS (0
°C≤TA≤70°C, VCC=5.0V±10%. See notes 1,2.)


Similar Part No. - KMM5322104CKUG

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
KMM5322200C2W SAMSUNG-KMM5322200C2W Datasheet
280Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322200C2WG SAMSUNG-KMM5322200C2WG Datasheet
280Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322204C2W SAMSUNG-KMM5322204C2W Datasheet
287Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM5322204C2WG SAMSUNG-KMM5322204C2WG Datasheet
287Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
More results

Similar Description - KMM5322104CKUG

ManufacturerPart #DatasheetDescription
logo
Samsung semiconductor
KMM5322200C2W SAMSUNG-KMM5322200C2W Datasheet
280Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V
KMM5322204C2W SAMSUNG-KMM5322204C2W Datasheet
287Kb / 17P
   2M x 32 DRAM SIMM using 1Mx16 , 1K Refresh, 5V
KMM372C213CK SAMSUNG-KMM372C213CK Datasheet
430Kb / 19P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 5V
KMM5324004CK SAMSUNG-KMM5324004CK Datasheet
276Kb / 15P
   4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM5328000CK SAMSUNG-KMM5328000CK Datasheet
271Kb / 15P
   8M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM5324000CK SAMSUNG-KMM5324000CK Datasheet
265Kb / 15P
   4M x 32 DRAM SIMM using 4Mx4, 4K/2K Refresh, 5V
KMM372F213CS SAMSUNG-KMM372F213CS Datasheet
455Kb / 20P
   2M x 72 DRAM DIMM with ECC using 2Mx8, 2K Refresh, 3.3V
KMM53232004BK SAMSUNG-KMM53232004BK Datasheet
420Kb / 19P
   32M x 32 DRAM SIMM Using 16Mx4, 4K Refresh, 5V
KMM5324000BSW SAMSUNG-KMM5324000BSW Datasheet
357Kb / 18P
   4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
KMM5324004CSW SAMSUNG-KMM5324004CSW Datasheet
435Kb / 21P
   4M x 32 DRAM SIMM Using 4Mx16, 4K Refresh, 5V
More results


Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.NET
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com