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KMM5324004BSW Datasheet(PDF) 3 Page - Samsung semiconductor |
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KMM5324004BSW Datasheet(HTML) 3 Page - Samsung semiconductor |
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3 / 19 page  DRAM MODULE KMM5324004BSW/BSWG * NOTE : ICC1, ICC3, ICC4 and ICC6 are dependent on output loading and cycle rates. Specified values are obtained with the output open. ICC is specified as an average current. In ICC1 and ICC3, address can be changed maximum once while RAS=VIL. In ICC4, address can be changed maximum once within one EDO mode cycle time, tHPC. ABSOLUTE MAXIMUM RATINGS * * Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions as detailed in the operational sections of this data sheet. Exposure to absolute maximum rating conditions for intended periods may affect device reliability. Item Symbol Rating Unit Voltage on any pin relative to VSS Voltage on VCC supply relative to VSS Storage Temperature Power Dissipation Short Circuit Output Current VIN, VOUT VCC Tstg Pd IOS -1 to +7.0 -1 to +7.0 -55 to +125 2 50 V V °C W mA RECOMMENDED OPERATING CONDITIONS (Voltage referenced to VSS, TA = 0 to 70 °C) *1 : VCC+2.0V at pulse width ≤20ns, which is measured at VCC. *2 : -2.0V at pulse width ≤20ns, which is measured at VSS. Item Symbol Min Typ Max Unit Supply Voltage Ground Input High Voltage Input Low Voltage VCC VSS VIH VIL 4.5 0 2.4 -1.0*2 5.0 0 - - 5.5 0 VCC*1 0.8 V V V V DC AND OPERATING CHARACTERISTICS (Recommended operating conditions unless otherwise noted) ICC1 ICC2 ICC3 ICC4 ICC5 ICC6 I(IL) I(OL) VOH VOL Symbol Speed KMM5324004BSW/BSWG Unit Min Max ICC1 -5 -6 - - 240 220 mA mA ICC2 Don ′t care - 4 mA ICC3 -5 -6 - - 240 220 mA mA ICC4 -5 -6 - - 220 200 mA mA ICC5 Don ′t care - 2 mA ICC6 -5 -6 - - 240 220 mA mA II(L) IO(L) Don ′t care -10 -5 10 5 uA uA VOH VOL Don ′t care 2.4 - - 0.4 V V : Operating Current * (RAS, CAS, Address cycling @ tRC=min) : Standby Current (RAS=CAS=W=VIH) : RAS Only Refresh Current * (CAS=VIH, RAS cycling @ tRC=min) : Hyper Page Mode Current * (RAS=VIL, CAS cycling : tHPC=min) : Standby Current (RAS=CAS=W=Vcc-0.2V) : CAS-Before-RAS Refresh Current * (RAS and CAS cycling @ tRC=min) : Input Leakage Current (Any input 0 ≤VIN≤Vcc+0.5V, all other pins not under test=0 V) : Output Leakage Current(Data Out is disabled, 0V ≤VOUT≤Vcc) : Output High Voltage Level (IOH = -5mA) : Output Low Voltage Level (IOL = 4.2mA) |
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