PESD12VU1UT datasheet(5/13 Pages) PHILIPS

Part #	PESD12VU1UT

Description	Ultra low capacitance ESD protection diode in SOT23 package

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Manufacturer	PHILIPS [NXP Semiconductors]

Direct Link	http://www.nxp.com

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5 / 13 page

9397 750 14912

Product data sheet

Rev. 01 — 11 May 2005

5 of 13

Philips Semiconductors

PESDxU1UT series

Ultra low capacitance ESD protection diode in SOT23 package

6.

Characteristics

[1]

Non-repetitive current pulse 8/20

µs exponential decay waveform according to IEC 61000-4-5.

[2]

Measured from pin 1 to 2

Table 8:

Characteristics

Tamb = 25 °C unless otherwise speciﬁed.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRWM

reverse stand-off voltage

PESD3V3U1UT

-

3.3

V

PESD5V0U1UT

-

5.0

V

PESD12VU1UT

-

12

V

PESD15VU1UT

-

15

V

PESD24VU1UT

-

24

V

IRM

reverse leakage current

PESD3V3U1UT

VRWM = 3.3 V

-

0.25

2

µA

PESD5V0U1UT

VRWM = 5.0 V

-

0.03

1

µA

PESD12VU1UT

VRWM = 12 V

-

< 1

50

nA

PESD15VU1UT

VRWM = 15 V

-

< 1

50

nA

PESD24VU1UT

VRWM = 24 V

-

< 1

50

nA

VBR

breakdown voltage

IR = 5 mA

[2]

PESD3V3U1UT

5.8

6.4

6.9

V

PESD5V0U1UT

7.0

7.6

8.2

V

PESD12VU1UT

14.2

15.0

16.7

V

PESD15VU1UT

17.1

18.9

20.3

V

PESD24VU1UT

25.4

27.8

30.3

V

Cd

diode capacitance

f = 1 MHz; VR = 0 V

[2] -

0.6

1.5

pF

VCL

clamping voltage

[1] [2]

PESD3V3U1UT

IPP = 1 A

-

9

V

IPP = 5 A

-

20

V

PESD5V0U1UT

IPP = 1 A

-

12

V

IPP = 5 A

-

21

V

PESD12VU1UT

IPP = 1 A

-

23

V

IPP = 5 A

-

39

V

PESD15VU1UT

IPP = 1 A

-

28

V

IPP = 5 A

-

53

V

PESD24VU1UT

IPP = 1 A

-

40

V

IPP = 3 A

-

76

V

rdif

differential resistance

IR = 1 mA

PESD3V3U1UT

-

400

Ω

PESD5V0U1UT

-

80

Ω

PESD12VU1UT

-

200

Ω

PESD15VU1UT

-

225

Ω

PESD24VU1UT

-

300

Ω

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