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PESD15VU1UT Datasheet(PDF) 3 Page - NXP Semiconductors |
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PESD15VU1UT Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 13 page 9397 750 14912 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 01 — 11 May 2005 3 of 13 Philips Semiconductors PESDxU1UT series Ultra low capacitance ESD protection diode in SOT23 package 5. Limiting values [1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5. Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PPP peak pulse power 8/20 µs [1] PESD3V3U1UT - 80 W PESD5V0U1UT - 80 W PESD12VU1UT - 200 W PESD15VU1UT - 200 W PESD24VU1UT - 200 W IPP peak pulse current 8/20 µs [1] PESD3V3U1UT - 5 A PESD5V0U1UT - 5 A PESD12VU1UT - 5 A PESD15VU1UT - 5 A PESD24VU1UT - 3 A Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C |
Similar Part No. - PESD15VU1UT |
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