KM732V789 datasheet(7/15 Pages) SAMSUNG

Part #	KM732V789

Description	128Kx32 Synchronous SRAM

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Manufacturer	SAMSUNG [Samsung semiconductor]

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KM732V789

128Kx32 Synchronous SRAM

- 7 -

Rev 5.0

February 1999

DC ELECTRICAL CHARACTERISTICS(TA=0 to 70

°C, VDD=3.3V+0.3V/-0.165V)

* VIL(Min)=-2.0(Pulse Width

≤ tCYC/2)

** VIH(Max)=4.6(Pulse Width

≤ tCYC/2)

** In Case of I/O Pins, the Max. VIH=VDDQ+0.5V

PARAMETER

SYMBOL

TEST CONDITIONS

MIN

MAX

UNIT

Input Leakage Current(except ZZ)

IIL

VDD = Max ; VIN=VSS to VDD

-2

+2

µA

Output Leakage Current

IOL

Output Disabled, VOUT=VSS to VDDQ

-2

+2

µA

Operating Current

ICC

Device Selected, IOUT=0mA,

ZZ

≤VIL, All Inputs=VIL or VIH

Cycle Time

≥ tCYC Min

-60

-

425

mA

-67

-

400

-72

-

375

-10

-

300

Standby Current

ISB

Device deselected, IOUT=0mA,

ZZ

≤VIL, f=Max,

All Inputs

≤0.2V or ≥ VDD-0.2V

-60

-

130

mA

-67

-

120

-72

-

110

-10

-

90

ISB1

Device deselected, IOUT=0mA, ZZ

≤0.2V,

f = 0, All Inputs=fixed (VDD-0.2V or 0.2V)

-

30

mA

ISB2

Device deselected, IOUT=0mA, ZZ

≥VDD-0.2V,

f=Max, All Inputs

≤VIL or ≥VIH

-

30

mA

Output Low Voltage(3.3V I/O)

VOL

IOL = 8.0mA

-

0.4

V

Output High Voltage(3.3V I/O)

VOH

IOH = -4.0mA

2.4

-

V

Output Low Voltage(2.5V I/O)

VOL

IOL = 1.0mA

-

0.4

V

Output High Voltage(2.5V I/O)

VOH

IOH = -1.0mA

2.0

-

V

Input Low Voltage(3.3V I/O)

VIL

-0.5*

0.8

V

Input High Voltage(3.3V I/O)

VIH

2.0

VDD+0.5**

V

Input Low Voltage(2.5V I/O)

VIL

-0.3*

0.7

V

Input High Voltage(2.5V I/O)

VIH

1.7

VDD+0.5**

V

TEST CONDITIONS

PARAMETER

VALUE

Input Pulse Level(for 3.3V I/O)

0 to 3V

Input Pulse Level(for 2.5V I/O)

0 to 2.5V

Input Rise and Fall Time(Measured at 0.3V and 2.7V for 3.3V I/O)

2ns

Input Rise and Fall Time(Measured at 0.3V and 2.1V for 2.5V I/O)

2ns

Input and Output Timing Reference Levels for 3.3V I/O

1.5V

Input and Output Timing Reference Levels for 2.5V I/O

VDDQ/2

Output Load

See Fig. 1

(VDD=3.3V+0.3V/-0.165V,VDDQ=3.3V+0.3/-0.165V or VDD=3.3V+0.3V/-0.165V,VDDQ=2.5V+0.4V/-0.125V, TA=0 to 70

°C)

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