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K6R1004C1D-KC10 Datasheet(PDF) 5 Page - Samsung semiconductor

Part # K6R1004C1D-KC10
Description  64Kx16 Bit High-Speed CMOS Static RAM(3.3V Operating) Operated at Commercial and Industrial Temperature Ranges.
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Manufacturer  SAMSUNG [Samsung semiconductor]
Direct Link  http://www.samsung.com/Products/Semiconductor
Logo SAMSUNG - Samsung semiconductor

K6R1004C1D-KC10 Datasheet(HTML) 5 Page - Samsung semiconductor

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PRELIMINARY
Rev. 3.0
- 5 -
July 2004
PRELIMINARY
K6R1004V1D
CMOS SRAM
for AT&T
TEST CONDITIONS
Parameter
Value
Input Pulse Levels
0V to 3V
Input Rise and Fall Times
3ns
Input and Output timing Reference Levels
1.5V
Output Loads
See below
AC CHARACTERISTICS(TA=0 to 70°C, VCC=3.3±0.3V, unless otherwise noted.)
Output Loads(B)
DOUT
5pF*
319
353
for tHZ, tLZ, tWHZ, tOW, tOLZ & tOHZ
+3.3V
* Including Scope and Jig Capacitance
Output Loads(A)
DOUT
RL = 50
ZO = 50
VL = 1.5V
30pF*
* Capacitive Load consists of all components of the
test environment.
READ CYCLE*
* The above parameters are also guaranteed at industrial temperature range.
Parameter
Symbol
K6R1004V1D-08
K6R1004V1D-10
Unit
Min
Max
Min
Max
Read Cycle Time
tRC
8-
10
-
ns
Address Access Time
tAA
-8
-
10
ns
Chip Select to Output
tCO
-8
-
10
ns
Output Enable to Valid Output
tOE
-4
-5
ns
Chip Enable to Low-Z Output
tLZ
3-3
-
ns
Output Enable to Low-Z Output
tOLZ
0-0
-
ns
Chip Disable to High-Z Output
tHZ
0
405
ns
Output Disable to High-Z Output
tOHZ
0
405
ns
Output Hold from Address Change
tOH
3-3
-
ns
Chip Selection to Power Up Time
tPU
0-0
-
ns
Chip Selection to Power DownTime
tPD
-8
-
10
ns


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