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K6T1008C2C-B Datasheet(PDF) 2 Page - Samsung semiconductor |
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K6T1008C2C-B Datasheet(HTML) 2 Page - Samsung semiconductor |
2 / 10 page PRELIMINARY K6T1008C2C Family CMOS SRAM Revision 2.0 November 1997 2 128K x8 bit Low Power CMOS Static RAM GENERAL DESCRIPTION The K6T1008C2C families are fabricated by SAMSUNG ′s advanced CMOS process technology. The families support various operating temperature ranges and have various package types for user flexibility of system design. The fami- lies also support low data retention voltage for battery back- up operation with low data retention current. FEATURES • Process Technology: TFT • Organization: 128K x8 • Power Supply Voltage: 4.5~5.5V • Low Data Retention Voltage: 2V(Min) • Three state output and TTL Compatible • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP1-0820F/R PIN DESCRIPTION PRODUCT FAMILY Product Family Operating Temperature Vcc Range Speed Power Dissipation PKG Type Standby (ISB1, Max) Operating (ICC2, Max) K6T1008C2C-L Commercial(0~70 °C) 4.5~5.5V 55/70ns 50 µA 10 µA 60mA 32-DIP, 32-SOP 32-TSOP1-F/R K6T1008C2C-B K6T1008C2C-P Industrial(-40~85 °C) 70ns 50 µA 15 µA 32-SOP 32-TSOP1-F/R K6T1008C2C-F FUNCTIONAL BLOCK DIAGRAM 32-TSOP Type1 - Reverse A11 A9 A8 A13 WE CS2 A15 VCC N.C A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 32-TSOP Type1 - Forward 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 N.C A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 VSS VCC A15 CS2 WE A13 A8 A9 A11 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 32-DIP 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32-SOP A11 A9 A8 A13 WE CS2 A15 VCC N.C A16 A14 A12 A7 A6 A5 A4 OE A10 CS1 I/O8 I/O7 I/O6 I/O5 I/O4 VSS I/O3 I/O2 I/O1 A0 A1 A2 A3 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice. Precharge circuit. Memory array 1024 rows 128 ×8 columns I/O Circuit Column select Clk gen. Row select A0 A1 A2 A3 A9 A11 A10 A4 A5 A6 A7 A8 A12 A14 I/O1 Data cont I/O8 A13 A15 A16 VCC VSS CS1 WE OE Control logic CS2 Data cont Name Function Name Function CS1,CS2 Chip Select Inputs I/O1~I/O8 Data Inputs/Outputs OE Output Enable Vcc Power WE Write Enable Input Vss Ground A0~A16 Address Inputs N.C No Connection |
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